2SD313 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD313
DESCRIPTION
- With TO-220C package
- Complement to type 2SB507
- Low collector saturation voltage
APPLICATIONS
- Designed for the output stage of 15W to 25W AF power amplifier PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 3 A ICM Collector current-Peak 8 A IB Base current 1 A PC Collector dissipation T C=25 30 W Tj Junction temperature 150 Tstg Storage temperature -50~150 THERMAL CHARACTERISTICS SYMBOL CHARACTERISTICS MAX UNIT R:jc Thermal resistance junction to case 4.16 /W
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD313 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-emitter voltage I C=10mA; IB=0 60 V VCEsat Collector-emitter saturation voltage I C=2A; IB=0.2A 1.0 V VBE Base-emitter on voltage I C=1A ; VCE=2V 1.5 V ICBO Collector cut-off current V CB=60V; IE=0 0.1 mA ICEO Collector cut-off current V CE=60V; IB=0 5 mA IEBO Emitter cut-off current V EB=5V; IC=0 1 mA hFE-1 DC current gain I C=1A ; VCE=2V 40 320 hFE-2 DC current gain I C=0.1A ; VCE=2V 40 fT Transition frequency I C=0.5A ; VCE=5V 5 MHz hFE-1Classifications C D E F 40-80 60-120 100-200 160-320
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD313 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)