2SD2599 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2599
DESCRIPTION
- With TO-3P(H)IS package
- High voltage;high speed
- Low saturation voltage
- Bult-in damper diode
APPLICATIONS
- Horizontal deflection output for color TV PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 3.5 A ICM Collector current-peak 7 A IB Base current 1 A PC Total power dissipation T C=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3P(H)IS) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2599 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage I C=300mA ;IB=0 5 V VCEsat Collector-emitter saturation voltage I C=3A; IB=0.8A 5 8 V VBEsat Base-emitter saturation voltage I C=3A; IB=0.8A 0.9 1.5 V ICBO Collector cut-off current V CB=1500V; IE=0 1 mA IEBO Emitter cut-off current V EB=5V; IC=0 66 200 mA hFE DC current gain I C=0.5A ; VCE=5V 8 25 VF Diode forward voltage I F=3.5A 1.5 2.0 V Cob Collector output capacitance I E=0 ; VCB=10V,f=1MHz 55 pF fT Transition frequency I C=0.1A ; VCE=10V 3 MHz Switching times : ts Storage time 7.5 10 µs tf Fall time ICP=3A;IB1=0.8A fH =15.75kHz 0.5 1.0 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2599 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2599