2SD2498 SAVANTIC | Alldatasheet

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Technical content

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2498

DESCRIPTION

  • With TO-3P(H)IS package
  • High speed
  • High voltage
  • Low saturation voltage

APPLICATIONS

  • Horizontal deflection output for high resolution display, color TV
  • High speed switching applications PINNING PIN DESCRIPTION

1 Base

2 Collector

3 Emitter

Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A ICM Collector current-peak 12 A IB Base current 3 A PC Total power dissipation T C=25 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3P(H)IS) and symbol

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2498 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ;IB=0 600 V VCEsat Collector-emitter saturation voltage I C=4A; IB=0.8A 5 V VBEsat Base-emitter saturation voltage I C=4A; IB=0.8A 0.9 1.2 V ICBO Collector cut-off current V CB=1500V; IE=0 1 mA IEBO Emitter cut-off current V EB=5V; IC=0 10 µA hFE-1 DC current gain I C=1A ; VCE=5V 10 30 hFE-2 DC current gain I C=4A ; VCE=5V 5 9 Cob Collector output capacitance I E=0 ; VCB=10V,f=1MHz 95 pF fT Transition frequency I C=0.1A ; VCE=10V 2 MHz Switching times : ts Storage time 7 10 µs tf Fall time ICP=4A;IB1=0.8A fH =15.75kHz 0.4 0.7 µs

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2498 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2498