D2396

2SD2396 JIANGSU | Alldatasheet

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www.cj-elec.com A-2,May,2016 TO – 220F 1. BASE 2. COLLECTOR 3. EMITTER JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2396 TRANSISTOR (NPN)

FEATURES

 Available in TO-220 F package  Darling connection provid es high dc current gain (h FE  Large collector power dissipation  Low frequency and Power amplifier MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M i n T y p M a x U n i t Collector-base breakdown voltag V (BR)CBO I C =50μA, I E =0 80 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 60 V Emitter-base breakdown voltage V (BR)EBO I E =50u A,I C =0 6 V Collector cut-off current I CBO V CB =80V,I E =0 100 μA Emitter cut-off current I EBO V EB =6V,I C =0 100 μA DC current gain h FE V CE =4V, I C =0.5A 400 2000 Collector-emitter saturation voltage V CE(sat) I C =2A,I B =50mA 0.8 V Base-emitter saturation voltage V BE(sat) I C =2A,I B =50mA 1.5 V Collector output capacitance C ob V CB =10V,I E =0, f=1MHz 55 pF Transition frequency f T V CE =5V,I C =0.2A,f=10MHz 40 MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. CLASSIFICATION OF h FE RANK H J K RANGE 400-800 600-1200 1000-2000 Symbol Parameter Value Unit V CBO Collector-Base Voltage 80 V V CEO Collector-Emitter Voltage 60 V V EBO Emitter-Base Voltage 6 V I C Collector Current 3 A P C Collector Power Dissipation 2 W R θJA Thermal Resistance from Junction to Ambient 62.5 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ 1 32

0.1 1 10 100 1000 10000 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 100 1000 0 25 50 75 100 125 150 500 1000 1500 2000 2500 3000 100 1000 200 400 600 800 1000 1200 100 1000 100 125 150 175 200 10 100 1000 100 1000 10000 012 3456 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 CAPACITANCE C (pF) REVERSE VOLTAGE V (V) C ob C ib f=1MHz I E =0/I C T a =25 V CB / V EB C ob / C ib T a T a COLLCETOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (mV) I C V BE COMMON EMITTER V CE =4V COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) P C —— T a BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) β=40 T a =100 T a =25 I C V BEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) I C V CEsat T a =100 T a =25 β=40 3000 30003000 3000 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE =4V T a =25 T a =100 I C h FE — — 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA I B =0.1mA COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) COMMON EMITTER T a =25 Static Characteristic Typical Characteristics www.cj-elec.com A-2,May,2016

www.cj-elec.com 3 A-2,May,2016 Min. Max. Min. Max. A 4.300 4.700 0.169 0.185 A2 2.800 3.200 0.110 0.126 A3 2.500 2.900 0.098 0.114 b 0.500 0.750 0.020 0.030 b1 1.100 1.350 0.043 0.053 b2 1.500 1.750 0.059 0.069 c 0.500 0.750 0.020 0.030 D 9.960 10.360 0.392 0.408 E 14.800 15.200 0.583 0.598 e F Ф h 0.000 0.300 0.000 0.012 L 28.000 28.400 1.102 1.118 L1 1.700 1.900 0.067 0.075 L2 0.900 1.100 0.035 0.043 2.700 REF. 3.500 REF. 0.138 REF. 0.106 REF. 0.800 REF. 0.500 REF. 0.031 REF. 0.020 REF. Symbol Dimensions In Millimeters Dimensions In Inches 2.540 TYP. 0.100 TYP. 1.300 REF. 0.051 REF.