2SD234 SAVANTIC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD234
DESCRIPTION
- With TO-220 package
- Complement to type 2SB434
APPLICATIONS
- For low frequency power amplifier and switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector- emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3 A 1.5 PC Collector power dissipation TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD234 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=5mA ,IB=0 50 V V(BR)CBO Collector-base breakdown voltage I C=1mA ,IE=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ,IC=0 6 V VCEsat Collector-emitter saturation voltage I C=3A; IB=0.3A 1.2 V VBEsat Base-emitter saturation voltage I C=3A; IB=0.3A 1.5 V ICBO Collector cut-off current V CB=40V; IE=0 10 µA IEBO Emitter cut-off current V EB=4V; IC=0 10 µA hFE DC current gain I C=0.5A ; VCE=1V 40 240 COB Output capacitance I E=0 ; VCB=10V,f=1MHz 90 pF fT Transition frequency I C=0.5A ; VCE=10V 3 MHz hFE Classifications R O Y 40-80 70-140 120-240
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD234 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)