2SD2333 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2333
DESCRIPTION
- ·With TO-3PML package
- High breakdown voltage
- Built-in damper diode
APPLICATIONS
- Color TV horizontal deflection output
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A IBM Base current-peak 2.5 A PC Collector power dissipation T C=25 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3PML) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2333 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=100mA; IB=0 800 V V(BR)EBO Emitter-base breakdown voltage I E=200mA , IC=0 5 V VCEsat Collector-emitter saturation voltage I C=4A ;IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage I C=4A; IB=0.8A 1.5 V ICBO Collector cut-off current V CB=500V; IE=0 10 µA hFE DC current gain I C=1A ; VCE=5V 8 VF Diode forward voltage I F=5A 2.0 V
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2333 PACKAGE OUTLINE Fig.2 Outline dimensions