2SD2095 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2095
DESCRIPTION
- With TO-3P(H)IS package
- Built-in damper diode
- High voltage ,high speed
- Low collector saturation voltage
APPLICATIONS
- For color TV horizontal output applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A IB Base current 2.5 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3P(H)IS) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2095 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200mA , IC=0 5 V VCEsat Collector-emitter saturation voltage I C=3.5A; IB=0.8A 3.0 5.0 V VBEsat Base-emitter saturation voltage I C=3.5A; IB=0.8A 1.5 V ICBO Collector cut-off current V CB=500V; IE=0 10 µA hFE DC current gain I C=1A ; VCE=5V 8 fT Transition frequency I C=0.1A ; VCE=10V 3 MHz COB Collector output capacitance I E=0 ; VCB=10V;f=1MHz 105 pF VF Diode forward voltage I F=5A 1.6 2.0 V tf Fall time ICP=3.5A ;IB1(end)=0.8A 0.5 1.0 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2095 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)