2SD2060 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2060
DESCRIPTION
- With TO-220F package
- Complement to type 2SB1368
- Low collector saturation voltage: VCE(SAT)=1.7V(Max) at IC=3A,IB=0.3A
- Collector power dissipation: PC=25W(TC=25)
APPLICATIONS
- With general purpose applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A IB Base current 0.4 A Ta=25 2.0 PC Collector dissipation TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220F) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2060 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=50mA ;IB=0 80 V V(BR)EBO Emitter-base breakdown voltage I E=10mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage I C=3A ;IB=0.3A 0.45 1.5 V VBE Base-emitter on voltage I C=3A;VCE=5V 1.0 1.5 V ICBO Collector cut-off current V CB=80V; IE=0 30 µA IEBO Emitter cut-off current V EB=5V; IC=0 100 µA hFE-1 DC current gain I C=0.5A ; VCE=5V 40 240 hFE-2 DC current gain I C=3A ; VCE=5V 15 50 fT Transition frequency I C=0.5A ; VCE=5V 8.0 MHz COB Collector output capacitance f=1MHz;V CB=10V 90 pF hFE-1 Classifications R O Y 40-80 70-140 120-240
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2060 PACKAGE OUTLINE Fig.2 Outline dimensions
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2060