2SD2023 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2023
DESCRIPTION
- With TO-220C package
- Complement to type 2SB1033
- Low collector saturation voltage
APPLICATIONS
- Low frequency power amplifiers
- Power drivers
- DC-DC converters PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3 A IB Base current 1 A PC Collector dissipation T C=25 40 W Tj Junction temperature 150 Tstg Storage temperature -50~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2023 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA; IB=0 60 V V(BR)CBO Collector-base breakdown voltage I C=50µA; IE=0 80 V V(BR)EBO Emitter-base breakdown voltage I E=50µA; IC=0 6 V VCEsat Collector-emitter saturation voltage I C=2A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage I C=2A; IB=0.2A 1.5 V ICBO Collector cut-off current V CB=60V; IE=0 10 µA IEBO Emitter cut-off current V EB=5V; IC=0 10 µA hFE DC current gain I C=1A ; VCE=5V 60 320 COB Collector output capacitance I E=0 ; VCB=10V;f=1MHz 70 pF fT Transition frequency I C=0.5A ; VCE=5V 8 MHz hFE Classifications D E F 60-120 100-200 160-320
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2023 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)