2SD1975 SAVANTIC | Alldatasheet
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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1975 2SD1975A
DESCRIPTION
- With TO-3PL package
- Complement to type 2SB1317/1317A
- Wide area of safe operation
- High transition frequency fT
APPLICATIONS
- For high power amplification
- Optimum for the output stage of a Hi-Fi audio amplifier PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SD1975 180 VCBO Collector-base voltage 2SD1975A Open emitter 200 V 2SD1975 180 VCEO Collector-emitter voltage 2SD1975A Open base 200 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A ICM Collector current-peak 25 A Ta=25 3.5 PC Collector power dissipation TC=25 150 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3PL) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1975 2SD1975A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage I C=10A ;IB=1A 2.5 V VBE Emitter-base voltage I C=8A ; VCE=5V 1.8 V 2SD1975 V CB=180V; IE=0 ICBO Collector cut-off current 2SD1975A V CB=200V; IE=0 50 µA IEBO Emitter cut-off current V EB=3V; IC=0 50 µA hFE-1 DC current gain I C=20mA ; VCE=5V 20 hFE-2 DC current gain I C=1A ; VCE=5V 60 200 hFE-3 DC current gain I C=8A ; VCE=5V 20 fT Transition frequency I C=0.5A ; VCE=5V 20 MHz COB Collector output capacitance f=1MHz;V CB=10V 200 pF hFE-2 classifications Q S P 60-120 80-160 100-200
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1975 2SD1975A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1975 2SD1975A