2SD1849 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1849
DESCRIPTION
- With TO-3PFa package
- High voltage,high speed
- Built-in damper diode
- Wide area of safe operation
APPLICATIONS
- Horizontal deflection output applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A Ta=25 3 PC Collector power dissipation TC=25 120 W Tj Max.operating junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1849 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage I E=500mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage I C=6A; IB=1.4A 8.0 V VBEsat Base-emitter saturation voltage I C=6A; IB=1.4A 1.5 V VCB=750V; IE=0 10 µA ICBO Collector cut-off current VCB=1500V; IE=0 1.0 mA hFE-1 DC current gain I C=1A ; VCE=5V 5 25 hFE-2 DC current gain I C=6A ; VCE=10V 4 fT Transition frequency I C=1A ; VCE=10V;f=0.5MHz 2 MHz VF Diode forward voltage I C=7A 2.0 V
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1849 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)