2SD1711 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1711
DESCRIPTION
- With TO-3PML package
- High voltage;high speed
- High reliability.
- Built-in damper diode
APPLICATIONS
- Ultrahigh-definition CRT display
- Horizontal deflection output applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A PC Collector power dissipation T C=25 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3PML) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1711 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=100mA;IB=0 800 V VCEsat Collector-emitter saturation voltage I C=4A;IB=0.8 A 5.0 V VBEsat Base-emitter saturation voltage I C=4A;IB=0.8 A 1.5 V IEBO Emitter cut-off current V EB=4V; IC=0 40 130 mA ICBO Collector cut-off current V CB=800V; IE=0 10 µA ICES Collector cut-off current V CE=1500V; RBE=0 1 mA hFE DC current gain I C=0.5 A ; VCE=5V 10 40
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1711 PACKAGE OUTLINE Fig.2 Outline dimensions