2SD1577 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1577
DESCRIPTION
- With TO-3PFa package
- Wide area of safe operation
- High voltage,high speed
APPLICATIONS
- Horizontal deflection output applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A ICM Collector current-peak 17 A IB Base current 3.5 A PC Collector power dissipation T C=25 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1577 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage I C=4.5A ;IB=2A 2.0 V VBEsat Base-emitter saturation voltage I C=4.5A ;IB=2A 1.3 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ;IC=0 6 V VCB=750V; IE=0 50 µA ICBO Collector cut-off current VCB=1500V; IE=0 1 mA IEBO Emitter cut-off current V EB=5V; IC=0 50 µA hFE DC current gain I C=2A ; VCE=10V 4 15 Switching times tstg Storage time 11 µs tf Fall time IC=4A; LB=10µH IBend=1.5A 1 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1577 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)