2SD1565 SAVANTIC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1565
DESCRIPTION
- With TO-220 package
- High DC current gain
- DARLINGTON
- Complement type 2SB1087
APPLICATIONS
- For low frequency power amplifier and power switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 0.5 A TC=25 30 PT Total power dissipation Ta=25 1.5 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1565 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=0.1A ; IB=0 100 V VCEsat Collector-emitter saturation voltage I C=2A; IB=2mA 1.5 V VBEsat Base-emitter saturation voltage I C=2A; IB=2mA 2.0 V ICBO Collector cut-off current V CB=100V ;IE=0 1.0 µA IEBO Emitter cut-off current V EB=7V; IC=0 5.0 mA hFE-1 DC current gain I C=2A ; VCE=2V 2000 20000 hFE-2 DC current gain I C=4A ; VCE=2V 500 Switching times ton Turn-on time 1.0 µs ts Storage time 3.5 µs tf Fall time IC=2A; IB1=-IB2=2mA RL=25A; VCCB50V 1.2 µs hFE-1 classifications M L K 2000-5000 4000-10000 8000-20000
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1565 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)