2SD1415A SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415A
DESCRIPTION
- With TO-220F package
- High DC current gain
- Low saturation voltage
- DARLINGTON
APPLICATIONS
- High power switching applications
- Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector -emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 7 A ICP Collector current peak 10 A IB Base current 0.7 A TC=25 25 PC Collector power dissipation Ta=25 2.0 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220F) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=50mA; IB=0 100 V VCEsat Collector-emitter saturation voltage I C=3A ;IB=6mA 0.9 1.5 V VBEsat Base-emitter saturation voltage I C=3A ;IB=6mA 1.5 2.0 V ICBO Collector cut-off current V CB=100V; IE=0 100 µA IEBO Emitter cut-off current V EB=6V; IC=0 3.0 mA hFE-1 DC current gain I C=3A ; VCE=3V 2000 15000 hFE-2 DC current gain I C=6A ; VCE=3V 1000 Switching times ton Turn-on time 0.3 µs tstg Storage time 5.1 µs tf Fall time IB1=-IB2=6mA VCC>45V ,RL=15@ 0.6 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415A PACKAGE OUTLINE Fig.2 Outline dimensions