2SD1415 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415
DESCRIPTION
- With TO-220Fa package
- High DC current gain
- Low saturation voltage
- Complement to type 2SB1020
- DARLINGTON
APPLICATIONS
- High power switching applications
- Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector -emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A IB Base current 0.2 A PC Collector power dissipation T C=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220Fa) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=50mA; IB=0 100 V VCEsat-1 Collector-emitter saturation voltage I C=3A ;IB=6mA 0.9 1.5 V VCEsat-2 Collector-emitter saturation voltage I C=7A ;IB=14mA 1.2 2.0 V VBEsat Base-emitter saturation voltage I C=3A ;IB=6mA 1.5 2.5 V ICBO Collector cut-off current V CB=100V; IE=0 100 µA IEBO Emitter cut-off current V EB=5V; IC=0 3.0 mA hFE-1 DC current gain I C=3A ; VCE=3V 2000 15000 hFE-2 DC current gain I C=7A ; VCE=3V 1000 Switching times ton Turn-on time 0.8 µs tstg Storage time 3.0 µs tf Fall time IB1=-IB2=6mA VCC=45V ,RL=15A 2.5 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1415 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)