2SD1414 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1414
DESCRIPTION
- With TO-220Fa package
- High DC current gain
- Low saturation voltage
- Complement to type 2SB1024
- DARLINGTON
APPLICATIONS
- Power amplifier and switching applications
- Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector -emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A IB Base current 0.5 A PC Collector power dissipation T C=25 20 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220Fa) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1414 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA; IB=0 80 V VCEsat Collector-emitter saturation voltage I C=3A ;IB=6mA 1.5 V VBEsat Base-emitter saturation voltage I C=3A ;IB=6mA 2.0 V ICBO Collector cut-off current V CB=100V; IE=0 20 µA IEBO Emitter cut-off current V EB=5V; IC=0 2.5 mA hFE-1 DC current gain I C=1A ; VCE=2V 2000 hFE-2 DC current gain I C=3A ; VCE=2V 1000 Switching times ton Turn-on time 0.2 µs tstg Storage time 1.5 µs tf Fall time IB1=-IB2=6mA VCC=30V ,RL=10? 0.6 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1414 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)