2SD1409 SAVANTIC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1409
DESCRIPTION
- With TO-220Fa package
- High DC current gain
- DARLINGTON
APPLICATIONS
- Igniter applications
- High volitage switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector -emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A IB Base current 1 A TC=25 25 PC Collector power dissipation Ta=25 2.0 W Tj Junction temperature 150 Tstg Storage temperature -55~150
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1409 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 400 V VCEsat Collector-emitter saturation voltage I C=4A ;IB=0.04A 2.0 V VBEsat Base-emitter saturation voltage I C=4A ;IB=0.04A 2.5 V VECF Emitter-collector diode forward voltage I E=4A; IB=0 3.0 V ICBO Collector cut-off current V CB=600V; IE=0 0.5 mA IEBO Emitter cut-off current V EB=5V; IC=0 3 mA hFE-1 DC current gain I C=2A ; VCE=2V 600 hFE-2 DC current gain I C=4A ; VCE=2V 100 COB Collector output capacitance f=1MHz ; V CB=50V;IE=0 35 pF Switching times ton Turn-on time 1 µs tstg Storage time 8 µs tf Fall time IB1=-IB2=0.04A VCC=100V ,RL=25@ 5 µs
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1409 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.15 mm)