2SD1406 SAVANTIC | Alldatasheet
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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1406 DESCRIPTION ·
- With TO-220Fa package
- Collector power dissipation :PC=25W@TC=25
- Low collector saturation voltage
- Complement to type 2SB1015
APPLICATIONS
- For audio frequency power amplifier applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector -emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A IB Base current 0.5 A Ta=25 2.0 PC Collector power dissipation TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220Fa) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1406 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 60 V VCEsat Collector-emitter saturation voltage I C=3A; IB=0.3A 0.25 1.0 V VBE Base-emitter voltage I C=0.5A ; VCE=5V 0.7 1.0 V ICBO Collector cut-off current V CB=60V; IE=0 100 µA IEBO Emitter cut-off current V EB=7V; IC=0 100 µA hFE-1 DC current gain I C=0.5A ; VCE=5V 60 300 hFE-2 DC current gain I C=3A ; VCE=5V 20 fT Transition frequency I C=0.5A; VCE=5V 3 MHz COB Collector output capacitance I E=0 ;f=1MHz ; VCB=10V 70 pF Switching times ton Trun-on time 0.8 µs ts Storage time 1.5 µs tf Fall time RL=15A;VCC=30V IB1=-IB2=0.2A 0.8 µs hFE-1 Classifications O Y GR 60-120 100-200 150-300
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1406 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1406