3DD13005 JIANGSU | Alldatasheet
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR（ NPN ）
FEATURES
PCM : 1.5 W（Tamb=25℃） Collector current ICM: 4 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 1000 µA，IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA，IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1000 µA，IC=0 V Collector cut-off current ICBO VCB= 700 V， IE=0 1000 µA Collector cut-off current ICEO VCE= 400 V， IB=0 100 µA Emitter cut-off current IEBO VEB= 9 V， IC=0 1000 µA DC current gain hFE VCE= 5 V, IC= 1000mA Collector-emitter saturation voltage VCE (sat) IC=2000mA,IB=500 mA 0.6 V Base-emitter saturation voltage VBE (sat) IC=2000mA, IB= 500mA 1.6 V Transition Frequency f T VCE=10 V, IC=500mA f = 1MHz MHz Fall time t f 0.9 µs Storage time t s IB1=-IB2=0.4A, IC=2A VCC=120V µs CLASSIFICATION OF hFE Rank Range 10-15 15-20 20-25 25-30 30-35 35-40 1 2 3 TO—220 1.BASE 2.COLLECTOR 3.EMITTER
D C A b E F L e TO-220-3L PACKAGE OUTLINE DIMENSIONS Symbol A b c D E e F L φ Min 4.470 2.520 0.710 1.170 0.310 1.710 10.010 8.500 12.060 4.980 2.590 13.400 3.560 3.790 Max 4.670 2.820 0.910 1.370 0.530 1.370 10.310 8.900 12.460 5.180 2.890 13.800 3.960 3.890 Min 1.176 0.099 0.028 0.046 0.012 0.046 0.394 0.335 0.475 0.196 0.102 0.528 0.140 0.149 Max 0.184 0.111 0.036 0.054 0.021 0.054 0.406 0.350 0.491 0.204 0.114 0.543 0.156 0.153 Dimensions In Millimeters Dimensions In Inches 0.100TYP 2.540TYP φ