D10-28 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 30 V BVCES IC = 10 mA 50 V BVEBO IE = 5.0 mA 4.0 V ICBO VCE = 28 V 250 µµµµA hFE VCE = 5.0 V IC = 100 mA 15 150 --- CCB VCB = 28 V f = 1.0 MHz 12 pF PG ηηηηC VCE = 28 V P OUT = 10 W f = 960 MHz 5.2 dB NPN SILICON RF POWER TRANSISTOR D10-28 DESCRIPTION: The ASI D10-28 is Designed for General Purpose UHF Amplifier Applications up to 1200 MHz. FEATURES:
- PG = 5.2 dB Typ. at 10 W/960 MHz
- Emitter Ballasting for Ruggedness
- Omnigold™ Metallization System MAXIMUM RATINGS IC 1.0 A VCEO 30 V PDISS 20 W @ TC = 25 °C TJ -65 to +200 °C TSTG -65 to +150 °C θθθθJC 8.8 OC/W PACKAGE STYLE .280 4L STUD MINIMUM inches / mm .003 / 0.08 .270 / 6.86 .117 / 2.97 B C D E F G A MAXIMUM .285 / 7.24 .137 / 3.48 .007 / 0.18 inches / mm H .245 / 6.22 .255 / 6.48 DIM 1.010 / 25.65 1.055 / 26.80 I J .217 / 5.51 .220 / 5.59 K .175 / 4.45 .572 / 14.53 .640 / 16.26 .130 / 3.30 .230 /5.84 G K H F E D C B 45° A #8-32 UNC I J EE B C