CXT5551

CXT5551 HTSEMI | Alldatasheet

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z Switching and amplification in high voltage Applications such as telephony z Low current(max. 600mA) z High voltage(max.180v) Marking: 1G6 MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 180 V V CEO Collector-Emitter Voltage 160 V V EBO Emitter-Base Voltage 6 V I C Collector Current -Continuous 0.6 A P C Collector Power Dissipation 0.5 W T J Junction Temperature 150 ℃ T stg Storage Temperature -65-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V (BR)CBO I C =100μ A,I E =0 180 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 160 V Emitter-base breakdown voltage V (BR)EBO I E =10 μ A,I C =0 6 V Collector cut-off current I CBO V CB =120V,I E =0 50 nA Emitter cut-off current I EBO V EB =4V,I C =0 50 nA h FE(1) V CE =5V,I C =1mA 80 h FE(2) V CE =5V,I C =10mA 80 300 DC current gain h FE(3) V CE =5V,I C =50mA 30 V CE(sat) I C =10mA,I B =1mA 0.15 V Collector-emitter saturation voltage V CE(sat) I C =50mA,I B =5mA 0.2 V V BE(sat) I C =10mA,I B =1mA 1 V Base-emitter voltage V BE(sat) I C =50mA,I B =5mA 1 V Transition frequency f T V CE =10V,I C =10mA,f=100MHz 100 MHz Collector output capacitance C ob V CB =10V,I E =0,f=1MHz 6 pF Noise figure NF V CE =5V,I c =0.2mA, f=10Hzto15.7KHZ,Rs=10Ω 8 dB SOT-89 1. BASE 2. COLLECTOR 3. EMITTER CXT5551 TRANSISTOR (NPN) Date:2011/05 www.htsemi.comsemiconductor JinYu

Date:2011/05 www.htsemi.comsemiconductor JinYu