CXT5551 HOTTECH | Alldatasheet

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Page:P2-P1 Plastic-EncapsulateTransistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES

  • Switching and amplification in high voltage Applications such as telephony
  • Low current(max. 600mA)
  • High voltage(max.180v) M arking:5551 Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-BaseV oltage V CBO 180 V Collector-EmitterV oltage V CEO 160 V Emitter-Base V oltage V EBO 6 V CollectorCurrent-Continuous IC 600 m A CollectorPower dissipation PC 500 m W Junction Temperature TJ 150 StorageTemp erature Tstg -55to +150 ELECTRICAL CHARACTERISTICS (@ Ta=25 unless otherwise specified) Parameter Sym bol Test conditions M in T yp M ax U nit Collector-base breakdow n voltage V (BR)CBO IC =100μ A,IE=0 180 V Collector-emitter breakdow n voltage V (BR)CEO IC =1mA,I B =0 160 V Emitter-base breakdow n voltage V (BR)EBO IE=10 μ A,IC =0 6 V Collector cut-off current ICBO V CB =120V ,IE=0 50 nA Emittercut-offcurrent IEBO V EB =4V ,IC =0 50 nA DC current gain hFE(1) V CE =5V ,IC =1mA 80 hFE(2) V CE =5V ,IC =10mA 80 300 hFE(3) V CE =5V ,IC =50mA 30 Collector-emitter saturationvoltage V CE(sat) IC =10mA,I B =1mA 0.15 V V CE(sat) IC =50mA,I B =5mA 0.2 V Base-emittervoltage V BE(sat) I C =10mA,I B mA V V BE(sat) IC =50mA,I B =5mA 1 V Transition frequency fT V CE =10V ,IC =10mA,f=100MHz 100 MHz Collector output capacitance C ob V CB =10V ,IE=0,f=1MHz 6 pF Noise figure NF V CE V c =0.2mA, f 10Hzto15.7 K H Z ,Rs 10Ω dB CXT5 551 (NPN ) 1. BASE 2.COLLECTO SOT -89 3.EMITTER

Page:P2-P2 Plastic-EncapsulateTransistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. CXT5 551 Typical Characteristics 02468 1 0 1 2 1 4 1 6 1 8 11 0 1 10 100 100 200 300 11 0 100 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 1 10 100 100 1000 0.1 1 10 100 200 400 600 800 1000 COMMON EMITTER T a =25 I B =20uA COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) Static Characteristic 200uA 180uA 160uA 140uA 120uA 100uA 80uA 60uA 40uA TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) I C f T V CE =10V T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) T a =25 T a =100 I C h FE V CE = 5V 0.3 500 C ob C ib f=1MHz I E =0 / I C T a =25 REVERSE VOLTAGE V (V) CAPACITANCE C (pF) V CB / V EB C ob / C ib AMBIENT TEMPERATURE T a ( ) COLLECTOR POWER DISSIPATION P C (W) P c —— T a 0.5 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) T a =25 T a =100 β=10 V CEsat —— I C 300 100 200 T a =25 T a =100 β=10 BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) I C V BEsat 300