CXE-1089Z

CXE-1089Z RFMD | Alldatasheet

Document overview

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Technical content

Features

Matching® Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade- Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. RF MEMS CXE-1089Z 50MHz to 1200MHz 75 Ω pHEMT MMIC LNA RFMD’s CXE-1 089Z is a high perf ormance 75Ω pHEMT MMIC low-noise amplifier utilizing a Darlington configuration with active bias. The active bias network provides stable current over temperature and process threshold voltage variations. The CXE-1089Z amplifier is designed for high linearity, low-noise consumer set-top box applications. It is internally matched to 75Ω and operates directly from 5V. Gain and Return Loss versus Frequency, T=25°C 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 Frequency (MHz) Gain (dB) -35 -32 -29 -26 -23 -20 -17 -14 -11 Return Loss (dB) S11 S21 S22 „ Flat Gain: 13dB+/-0.4dB, 50MHz to 1000MHz „ Excellent Return Loss: >15.5dB „ Low Distortion: CTB=-82dBc, CSO=-66dBc „ Single, Fixed 5V Supply „ On-Chip Active Bias Network

Applications

„ CATV Set Top Box / Tuners „ CATV Drop Amplifiers „ Optical Rx/Tx „ FTTH Video Solutions EDS-105785 Rev D Preliminary RoHS Compliant and Pb-Free Product Package: SOT-89 CXE-1089Z 50MHz to 1200MHz 75Ω pHEMT MMIC LNA Parameter Specification Unit ConditionMin. Typ. Max. Small Signal Gain 13.0 dB 500MHz Gain Flatness +/-0.4 dB 50MHz to 1000MHz Output Power at 1dB Compression 18.5 dBm 500MHz Output Third Order Intercept Point 38.5 dBm 500MHz CSO -66.0 dBc 55.25MHz to 745.25MHz, 110Ch, Flat Tilt, 15dBmV Input CTB -79.0 dBc 55.25MHz to 745.25MHz, 110Ch, Flat Tilt, 15dBmV Input XMOD -74.0 dBc 55.25MHz to 745.25MHz, 110Ch, Flat Tilt, 15dBmV Input Input Return Loss, Worst Case 16.5 dB 50MHz to 1000MHz Output Return Loss, Worst Case 15.5 dB 50MHz to 1000MHz Noise Figure 3.0 dB 500MHz Device Operating Voltage 5.00 5.25 V Device Operating Current 110.0 mA Quiescent Thermal Resistance 57.5 °C/W Junction-to-case Test Conditions: V D=5V I D=110mA Typ. OIP3 Tone Spacing=1MHz, P OUT per tone=8dBm TL=25°C ZS=ZL=75 Ω Tested with App Circuit

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Absolute Maximum Ratings Parameter Rating Unit Device Current (ID)1 2 5 m A Device Voltage (VD)5 . 5 V Power Dissipation 690 mW RF Input Power* (See Note) 23 dBm Junction Temperature (TJ)+ 1 5 0 ° C Operating Temperature Range (TL)- 4 0 t o + 8 5 ° C Storage Temperature Range -65 to +150 °C ESD Rating - Human Body Model (HBM) Class 1A Moisture Sensitivity Level MSL 1 *Note: Load condition, 10:1 VSWR Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: I DVD<(TJ-TL)/R TH, j-l TL=TLEAD Frequency (MHz) Parameters Units 50 250 550 750 850 1050 Test Conditions: V D=5V I D=110mA Typ. OIP3, OIP2 Tone Spacing=1MHz, P OUT per tone=8dBm TL=25°C ZS=ZL=75 Ω Tested with App Circuit Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. Current versus Voltage (RBIAS=Open) 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 Device Voltage (V) Device Current (mA) -40°C +25°C +85°C

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Application Circuit Performance (VD=5V , ID=110mA, R BIAS=open) S21 versus Frequency 8.0 10.0 12.0 14.0 16.0 18.0 Frequency (GHz) S21 (dB) -40°C 25°C 85°C S11 versus Frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 Frequency (GHz) S11 (dB) -40°C 25°C 85°C S22 versus Frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 Frequency (GHz) S22 (dB) -40°C 25°C 85°C S12 versus Frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 Frequency (GHz) S12 (dB) -40°C 25°C 85°C

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Application Circuit Performance (VD=5V , ID=110mA, R BIAS=open) OIP3 (8dBm/tone, 1MHz spacing) 34.0 36.0 38.0 40.0 42.0 44.0 Frequency (GHz) OIP3 (dBm) -40°C 25°C 85°C P1dB versus Frequency 12.0 14.0 16.0 18.0 20.0 22.0 Frequency (GHz) P1dB (dBm) -40°C 25°C 85°C NF versus Frequency 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Frequency (GHz) NF (dB) -40°C 25°C 85°C OIP2 (8dBm/tone, 1MHz spacing) 30.0 35.0 40.0 45.0 50.0 55.0 60.0 65.0 70.0 75.0 80.0 Frequency (GHz) OIP2 (dBm) -40°C 25°C 85°C

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Composite Performance - Application Circuit: (VD=5V , ID=110mA, 110Ch. Flat Tilt, R BIAS=Open) -CSO, +15dBmV Input, 110 Ch 50.0 55.0 60.0 65.0 70.0 75.0 80.0 85.0 90.0 95.0 100.0 Frequency (MHz) -CSO (dBc) -40°C +25°C +85°C +CSO, +15dBmV Input, 100 Ch 50.0 55.0 60.0 65.0 70.0 75.0 80.0 85.0 90.0 95.0 100.0 Frequency (MHz) +CSO (dBc) -40°C +25°C +85°C XMOD, +15dBm V Input, 110 Ch 50.0 55.0 60.0 65.0 70.0 75.0 80.0 85.0 90.0 95.0 100.0 Frequency (MHz) XMOD (dBc) -40°C +25°C +85°C CTB, +15dBm V Input, 110 Ch 50.0 55.0 60.0 65.0 70.0 75.0 80.0 85.0 90.0 95.0 100.0 Frequency (MHz) CTB (dBc) -40°C +25°C +85°C

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Application Circuit Performance versus Device Current (varying RBIAS) VD=5.0V, T=+25°C S11 versus Frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 Frequency (GHz) S11 (dB) 80mA 90mA 100mA S21 versus Frequency 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Frequency (GHz) S21 (dB) 80mA 90mA 100mA S12 versus Frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 Frequency (GHz) S12 (dB) 80mA 90mA 100mA S22 versus Frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 Frequency (GHz) S22 (dB) 80mA 90mA 100mA

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Application Circuit Performance versus Device Current (RBIAS) VD=5.0V, T=+25°C OIP3 versus Frequency (8dBm/tone, 1MHz spacing) 25.0 27.0 29.0 31.0 33.0 35.0 37.0 39.0 41.0 43.0 45.0 Frequency (GHz) OIP3 (dBm) 80mA 90mA 100mA OIP2 versus Frequency (8dBm/tone, 1MHz spacing) 35.0 40.0 45.0 50.0 55.0 60.0 65.0 70.0 75.0 Frequency (GHz) OIP2 (dBm) 80mA 90mA 100mA NF versus Frequency 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Frequency (GHz) NF (dB) 80mA 90mA 100mA P1dB versus Frequency 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 Frequency (GHz) P1dB (dBm) 80mA 90mA 100mA

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Application Circuit Performance versus Device Current (RBIAS) VD=5.0V, T=+25°C XMOD, 110 Ch, Flat +15dBmV Input 50.0 55.0 60.0 65.0 70.0 75.0 80.0 85.0 90.0 95.0 100.0 Frequency (MHz) XMOD (dBc) 80mA 90mA 100mA CTB, 110 Ch, Flat +15dBmV Input 50.0 55.0 60.0 65.0 70.0 75.0 80.0 85.0 90.0 95.0 100.0 Frequency (MHz) CTB (dBc) 80mA 90mA 100mA -CSO, 110 Ch, Flat +15dBmV Input 50.0 55.0 60.0 65.0 70.0 75.0 80.0 85.0 90.0 95.0 100.0 Frequency (MHz) -CSO (dBc) 80mA 90mA 100mA +CSO, 110 Ch, Flat +15dBmV Input 50.0 55.0 60.0 65.0 70.0 75.0 80.0 85.0 90.0 95.0 100.0 Frequency (MHz) +CSO (dBc) 80mA 90mA 100mA

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Application Schematic Application Circuit Element Values Evaluation Board Layout and Bill of Materials Mounting Instructions 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mil thick GTEK board with 1 ounce copper on both sides. Reference Designator Frequency (MHz) 50 to 1200 F-connectors C1, C3, C4 1000pF 0603 size C2 100pF 0603 size L1 1.2uH 1008LS size *RBIAS See table below *Optional shunt resistor can be used to lower device current. Performance degradation may occur. RBIAS Device Current (VD=5.0V) 1.3kΩ 80mA 2.4kΩ 90mA 4.7kΩ 100mA open 110mA C2C1 CXE-1089Z RF IN *RBIAS C4 RF OUT 75ohm 31mil SOT-89 125873 1.2uH2uH MicroDevices Sirenza Rbiasbi

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Package Marking Package Outline Dimensions shown in inches [mm] Recommended Land Pattern Drawings Dimensions shown in inches [mm]

Ordering Information

1R F I N RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 2, 4 GND Connection to ground. Use via holes as close as possible to the ground leads to minimize inductance. 3R F O U T / B I A S RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper oper- ation. Part Number Description Reel Size Devices/Reel CXE-1089Z 50MHz to 1200MHz 75 Ω pHEMT MMIC LNA 7” 1000 CXE-1089Z-EVB1 Evaluation Board N/A N/A CX1Z