CT60AM-18F POWEREX | Alldatasheet
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Sep. 2000 CT60AM-18F OUTLINE DRAWING Dimensions in mm TO-3PL MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR APPLICATION Microwave oven, Electromagnetic cooking devices, Rice-cookers 900 ±25 ±30 120 180 –40 ~ +150 –40 ~ +150 V GE = 0VCollector-Emitter Voltage Gate-Emitter Voltage Peak Gate-Emitter Voltage Collector Current Collector Current (Pulse) Emitter Current Maximum Power Dissipation Junction T emperature Storage Temperature V V V A A A W VCES VGES VGEM IC ICM IE PC Tj Tstg Symbol MAXIMUM RATINGS (Tc = 25°C) Parameter Conditions Ratings Unit l Simple drive l Integrated Fast-recovery diode l Small tail loss l Low VCE Saturation Voltage 20MAX. 5 2620.6MIN. 0.5 2.5 4.0 φ3.2 5.45 5.45 À GATE \ COLLECTOR ´ EMITTER ˆ COLLECTOR ˆ À\´ À
Sep. 2000 ICES IGES VGE(th) VCE(sat) C ies C oes C res td(on) tr td(off) tf Etail Itail VEC trr R th(j-c) R th(j-c) mA µA V V pF pF pF µs µs µs µs mJ/pls A V µs °C/W °C/w 2.0 4.0 2.1 4400 115 0.05 0.1 0.2 0.2 0.6 2.2 0.5 1.0 0.5 6.0 2.7 1.0 3.0 2.0 0.69 4.0 ELECTRICAL CHARACTERISTICS (Tch = 25°C) Collector cutoff current Gate leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on deray time Turn-on rise time Turn-off delay time Turn-off fall time Tail loss Tail current Emitter-collector voltage Diode reverse recovery time Thermal resistance (IGBT) Thermal resistance (Diode) Symbol UnitParameter Test conditions Limits Min. Typ. Max. VCE = 900V, VGE = 0V VGE = ±20V, VCE = 0V VCE = 10V, IC = 6mA IC = 60A, VCE = 15V VCE = 25V, VGE = 0V, f = 1MHz VCC = 300V , IC = 60A, VGE = 15V, RG = 10Ω ICP = 60A, Tj = 125°C, dv/dt = 200V/µs IE = 60A, VGE = 0V IE = 60A, dis/dt = –20A/µs Junction to case Junction to case MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR