CT25AS-8 POWEREX | Alldatasheet
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Feb.1999 VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.5s See figure 1 CT25AS-8 450 ±0.1 7.0 I C = 1mA, VGE = 0V VCE = 400V, VGE = 0V VGE = ±40V, VCE = 0V VCE = 10V, IC = 1mA V(BR)CES ICES IGES VGE(th) 400 ±30 ±40 150 –40 ~ +150 –40 ~ +150 V V V A VCES VGES VGEM ICM Tj Tstg V µA µA V OUTLINE DRAWING Dimensions in mm MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25AS-8 STROBE FLASHER USE APPLICATION Strobe Flasher.Parameter ConditionsSymbol Ratings Unit Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol UnitParameter Test conditions Limits Min. Typ. Max. MAXIMUM RATINGS (Tc = 25°C) Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage MP-3 6.5 2.3 2.3 0.9MAX. 1 .0MAX. 2.3 1.0 0.5 ± 0.1 5.5 ± 0.2 10MAX. 2.3MIN. 1.5 ± 0.2 1 2 3 0.5 ± 0.2 0.8 5.0 ± 0.2 q GATE w COLLECTOR e EMITTER r COLLECTOR wr q e
Feb.1999 IXe Vtrig VCE R G VG IGBT C M + VCM Vtrig VG Ixe RECOMMEND CONDITION VCM = 330V IP = 130A C M = 300µF VGE = 28V MAXIMUM CONDITION 350V 150A 400µF 200 160 120 0 504030100 20 C M = 400µF TC = 50°C< <TC = 70°C MAXIMUM PULSE COLLECTOR CURRENT GATE-EMITTER VOLTAGE V GE (V) PULSE COLLECTOR CURRENT I CM (A) TRIGGER SIGNAL Xe TUBE CURRENT VOLTAGE IGBT GATE MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25AS-8 STROBE FLASHER USE PERFORMANCE CURVES APPLICATION EXAMPLE Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse gate current during turn-off must be kept less than 1A. (In general, it is satisfied if RG ≥ 30Ω ) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe ≤ 150A : full luminescence condition) of main condenser (CM =400µF). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total operation hours must be applied within 5,000 hours. Figure 1