CSD40N160 DOINGTER | Alldatasheet

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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=40V,ID=30A,RDS(ON)<20mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 30 A Continuous Drain Current-TC=100℃ 21 Continuous Drain Current-TA=25℃ 8.4 Continuous Drain Current-TA=70℃ 6.7 IDM Pulsed Drain Current2 80 A EAS Single Pulsed Avalanche Energy3 31.3 mJ IAS Avalanche Current 25 A PD Power Dissipation4-TC=25℃ 31.3 W Power Dissipation4-TA=25℃ 2 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ D S G CSD40N160 All d ata sheet.com

www.doingter.cn — 2 — Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 4 ℃/W RƟJA Thermal Resistance, Junction-to-Ambient1 62 Symbol Parameter Conditions Min Typ Max Units Off Characteristics V(BR)DSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 40 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=32V,TJ = 25℃ --- --- 1 μA VGS=0V, VDS=32V,TJ = 55℃ --- --- 5 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 --- 2.5 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=15A --- --- 20 mΩ VGS=4.5V,ID=10A --- --- 25 mΩ GFS Forward Transconductance VDS =5V, ID =15A --- 34 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.1 --- Ω Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 1010 --- pFCoss Output Capacitance --- 102 --- Crss Reverse Transfer Capacitance --- 70 --- Switching Characteristics td(on) Turn-On Delay Time VDD=20V,ID=15A, RG =3.3Ω, VGS=10V --- 2.8 --- ns tr Rise Time --- 12.8 --- ns CSD40N160 Electrical Characteristics：(TC=25℃ unless otherwise noted) All d ata sheet.com

www.doingter.cn — 3 — td(off) Turn-Off Delay Time --- 21.2 --- ns tf Fall Time --- 6.4 --- ns Qg Total Gate Charge VDS=32V, VGS=4.5V, ID=15A --- 10 --- nC Qgs Gate-Source Charge --- 2.55 --- nC Qgd Gate-Drain Charge --- 4.8 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 IS=1A, VGS=0V,TJ = 25℃ --- --- 1.2 V IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 33 A ISM Pulsed Source Current2,5 --- --- 80 A Trr Reverse Recovery Time IF= 15 A,dIF / dt = 100 A/μs TJ = 25℃ --- 10 --- ns Qrr Reverse Recovery Charge --- 3.1 --- Notes: Typical Characteristics： (TJ=25℃ unless otherwise noted) 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=25A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage VDD=20V,ID=15A, RG =3.3Ω, VGS=10V nC CSD40N160 All d ata sheet.com

www.doingter.cn — 4 — VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 TJ , Junction Temperature ( ℃ Normalized On Resistance Fig.3 Forward Characteristics Of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 100 1000 10000 1 5 9 13 17 21 25 VDS Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss Fig.8 Safe Operating AreaFig.7 Capacitance ( ) CSD40N160

— 5 — 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T 0.02 Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform waveform CSD40N160 0086-0755-8278-9056 www.doingter.cn