CSD20N45 DOINGTER | Alldatasheet
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www.doingter .cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=20V,ID=60A,RDS(ON) <6mΩ@VGS=4.5V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON) . 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain -Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID Continuous Drain Current -TC=25℃ 60 A Continuous Drain Current -TC=100℃ 42 Pulsed Drain Current 1 210 EAS Single Pulse Avalanche Energy 200 mJ PD Power Dissipation ,TC=25℃ 60 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 2.1 ℃/W RƟJA Thermal Resistance,Junction to Ambient --- D S G CSD20N45 All d ata sheet.com
www.doingter .cn — 2 — Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain -Sourtce Breakdown Voltage VGS=0V,ID=250μA 20 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=20V --- --- 1 μA IGSS Gate -Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 0.5 0.75 1.0 V RDS(ON) Drain -Source On Resistance3 VGS=4.5V,ID=20A --- 4.8 6 mΩ VGS=2.5V,ID=15A --- 6.2 9 GFS Forward Transconductance VDS=10V, ID=20A 15 --- --- S Dynamic Characteristics Ciss Input Capacitance VDS=10V, VGS=0V, f=1MHz --- 2000 --- pF Coss Output Capacitance --- 500 --- Crss Reverse Transfer Capacitance --- 200 --- Switching Characteristics td(on) Turn-On Delay Time 3 VDD=10V, ID=2A, VGS=4.5V,RG=3Ω --- 6.4 --- ns tr Ris e Time2,3 --- 17.2 --- ns td(off) Turn-Off Delay Time --- 29.6 --- ns tf Fall Time 2,3 --- 16.8 --- ns Qg Total Gate Charge3 VGS=10V, VDS=10V, ID=20A --- 27 30 nC Qgs Gate -Source Charge --- 6.5 --- nC Qgd Gate -Drain “Miller” Charge --- 6.4 --- nC Drain-Source Diode Characteristics VSD Source -Drain Diode Forward Voltage3 VGS=0V,IS=10A --- --- 1.2 V CSD20N45 Electrical Characteristics：(TC=25℃ unless otherwise noted) All d ata sheet.com
— 5 — Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance CSD20N45 0086-0755-8278-9056 www.doingter.cn All d ata sheet.com