CS48N75 DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=70V,ID=68A,RDS(ON)<8.4mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 70 V VGS Gate-Source Voltage ±25 V ID Continuous Drain Current- 68 A Continuous Drain Current-TC=100℃ 47.6 Pulsed Drain Current1 272 EAS Single Pulse Avalanche Energy2 380 mJ PD Power Dissipation 88 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 1.7 ℃/W RƟJA Thermal Resistance,Junction to Ambient --- D S G Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.EAS condition:TJ=25℃,VDD=33V,VG=10V CS48N75 All d ata sheet.com
www.doingter.cn — 2 — Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 70 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=68V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±25V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=70A --- 7 8.4 mΩ GFS Forward Transconductance VDS=10V, ID=15A 18 --- --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 2860 --- pF Coss Output Capacitance --- 281 --- Crss Reverse Transfer Capacitance --- 265 --- Switching Characteristics td(on) Turn-On Delay Time VDD=30V, ID=2A, RGEN=15Ω.VGS=10V --- 18 --- ns tr Rise Time --- 29 --- ns td(off) Turn-Off Delay Time --- 55 --- ns tf Fall Time --- 27 --- ns Qg Total Gate Charge VGS=10V, VDS=50V, ID=40A --- 77 --- nC Qgs Gate-Source Charge --- 15.7 --- nC Qgd Gate-Drain “Miller” Charge --- 35.2 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage1 VGS=0V,IS=40A --- 0.89 0.99 V Ls Diode Forward Current --- --- --- 68 A CS48N75 Electrical Characteristics：(TC=25℃ unless otherwise noted) All d ata sheet.com
www.doingter.cn — 3 — Trr Reverse Recovery Time1 --- 33 --- NS Qrr Reverse Recovery Charge1 --- 26 --- NC Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) TJ=25℃,IF=75A di/dt=100A/μs 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting TJ=25℃ Figure1. Output Characteristics Figure2. Transfer Characteristics VDS Drain-Source Voltage (V) VGS Gate-Source Voltage (V) Figure3. BVDSS vs Junction Temperature Figure4. ID vs Junction Temperature T emperature（℃） T emperature（℃） ID-Drain Current (A) ID-Drain Current (A) ID-Drain Current(A) Normalized BVDSS CS48N75 All d ata sheet.com
www.doingter.cn — 4 — Figure5. VGS(th) vs Junction Temperature Figure6. Rdson Vs Junction Temperature T emperature（℃） C Capacitance (pF) Qg Gate Charge (nC) VGS (Volts) VDS Drain-Source Voltage (V) ID-Drain Current(A) Figure9. Source- Drain Diode Forward Figure10. Safe Operation Area Tc = 25℃ Figure7. Gate Charge Figure8. Capacitance vs Vds VDS Drain-Source Voltage (V) VSD Source-Drain Voltage (V) IS - Source Drain Current (A) CS48N75 All d ata sheet.com
— 5 — Figure11. Normalized Maximum Transient Thermal Impedance Square Wave Pluse Duration(sec) R(t), Normalized Effective Transient Thermal Impedance CS48N75 0086-0755-8278-9056 www.doingter.cn All d ata sheet.com