CR8PM

CR8PM POWEREX | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Feb.1999 CR8PM APPLICATION Switching mode power supply, ECR, regulator for autocycle, motor control

• UL Recognized: File No. E80276 Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS on-state current Average on-state current Surge on-state current I 2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Isolation voltage Conditions Commercial frequency, sine half wave, 180° conduction, T c=81°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta=25°C, AC 1 minute, each terminal to case Unit A A A A W W V V A g V Ratings 12.6 8.0 120 5.0 0.5 6.0 2.0 –40 ~ +125 –40 ~ +125 2.0 1500 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage Voltage class Unit V V V V V MAXIMUM RATINGS (Ta=25°C, unless otherwise noted) 400 500 320 400 320 600 720 480 600 480 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR8PM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING Dimensions in mm TO-220F TYPE NAME VOLTAGE CLASS φ3.2±0.2

1.3 MAX

0.8 2.54

13.5 MIN

3.6 5.0 1.2 8.5

10.5 MAX

5.2 4.5231 1/CR 2/CR CATHODE ANODE GATE 2.54 2.8 0.5 2.6 ∗ Measurement point of case temperature

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR8PM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE ]1. The contact thermal resistance Rth (j-c) is 0.5°C/W with greased.

ELECTRICAL CHARACTERISTICS

R th (j-c) Test conditions Tj=125°C, VRRM applied Tj=125°C, VDRM applied Tc=25°C, ITM =25A, instantaneous value Ta=25°C, VD =6V, IT=1A Tj=125°C, VD=1/2VDRM Tj=25°C, VD=6V, IT=1A Tj=25°C, VD=12V Junction to case ]1 Unit mA mA V V V mA mA °C/W Typ. 1.5 Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Limits Min. 0.2 Max. 2.0 2.0 1.4 1.0 3.7 100 23 5 7 1 0 1 23 5 7 1 0 244 120 160 200 100 140 180 501 4 23 103 102 101 100 Tc = 125°C MAXIMUM ON-STATE CHARACTERISTICS ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT SURGE ON-STATE CURRENT (A) CONDUCTION TIME (CYCLES AT 60Hz) PERFORMANCE CURVES

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR8PM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE 100 571 01 23 57 1 02 23 5 23 571 03 102 101 10–1 VFGM = 6V VGT = 1V IGT = 15mA PGM = 5W VGD = 0.2V IFGM = 2A PG(AV) = 0.5W 102 10–2 100 101 10–1 100 10–323 57 2310–2 57 210–1 10135 7 2 35 7 16060–20–40 0 20 40 80 100120140 103 102 101 100 TYPICAL EXAMPLE 160 120 140 100 0 160 4 8 12 1426 1 0 θ = 30°60° 120° 90° 180° θ 360° RESISTIVE, INDUCTIVE LOADS MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE GATE TRIGGER VOLTAGE (V) JUNCTION TEMPERATURE (°C) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) CASE TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) TRANSIENT THERMAL IMPEDANCE (°C/W) TIME (s) GATE VOLTAGE (V) GATE CURRENT (mA) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 120–40 –20 20 80 0.2 0.5 0.9 06 0 40 100 TYPICAL EXAMPLE DISTRIBUTION 0 160 4 8 12 1426 1 0 θ 360° RESISTIVE, INDUCTIVE LOADS GATE CHARACTERISTICS 100 (%)GATE TRIGGER CURRENT (T j = t°C) GATE TRIGGER CURRENT (T j = 25°C)

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR8PM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE 23101 571 02 23 57 1 03 23 57 1 04 160 100 120 140 # 2 # 1 Tj = 125°C TYPICAL EXAMPLE I GT (25°C) # 1 4.7mA # 2 7.2mA 160 120 140 100 0 160–40 0 40 80 120140–20 20 60 100 TYPICAL EXAMPLE 0 160 4 8 12 1426 1 0 θ = 30°60° 120°90° 180° θ θ 360° RESISTIVE LOADS 160 120 140 100 0 160 4 8 12 1426 1 0 180° θ θ 360° 60° 90° 120° θ = 30° RESISTIVE LOADS MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) CASE TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) CASE TEMPERATURE (°C) AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) 100 (%)BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) 100 (%)BREAKOVER VOLTAGE (dv/dt = vV/µs) BREAKOVER VOLTAGE (dv/dt = 1V/µs) 0 160 4 8 12 1426 1 0 θ 360° RESISTIVE, INDUCTIVE LOADS θ = 30°60° 120° 90° 180° 270° DC 160 120 140 100 0 160 4 8 12 1426 1 0 θ 360° RESISTIVE, INDUCTIVE LOADS θ = 30° 120° 180° DC 270°60° 90°

Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR8PM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE 0 200 4 1 01 41 8 1626 8 1 2 /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, 5.0 3.5 1.5 1.0 0.5 4.0 4.5 3.0 2.0 2.5 0 1000 20 50 70 90 8010 30 40 60 VD = 100V R L = 12Ω Ta = 25°C TYPICAL EXAMPLE I GT (25°C) # 5.2mA 160 120 140 100 0 160–40 0 40 80 120140–20 20 60 100 TYPICAL EXAMPLE 102 2310–1 571 00 23 57 1 01 23 57 1 02 104 103 101 0.1s twTYPICAL EXAMPLE 16060–20–40 0 20 40 80 100120140 103 102 101 100 TYPICAL EXAMPLE DISTRIBUTION HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (mA) JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE CURRENT PULSE WIDTH (µs) 100 (%)GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC ) REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) TURN-ON TIME VS. GATE CURRENT TURN-ON TIME (µs) GATE CURRENT (mA) HOLDING CURRENT VS. GATE TRIGGER CURRENT HOLDING CURRENT (mA) GATE TRIGGER CURRENT (mA) TURN-OFF TIME VS. JUNCTION TEMPERATURE TURN-OFF TIME (µs) JUNCTION TEMPERATURE (°C) 0 1600 40 80 120 14020 60 100 /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, /,/,/,/,/,/,/,/,/, IT = 8A, –di/dt = 5A/µs, VD = 300V dv/dt = 20V/µs V R = 50V TYPICAL EXAMPLE DISTRIBUTION 100 (%)REPETITIVE PEAK REVERSE VOLTAGE (T j = t°C) REPETITIVE PEAK REVERSE VOLTAGE (T j = 25°C)