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◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 1.0 A ) ◆ Low On-State Voltage (1.3V(Typ.)) General Description Sensitive-gate triggering thyristor is suit able for the a pplication where gate cu rrent lim ited such as small motor control, gate driver for large thyristor, sensing and detecting circuits. 3. Anode 2.Gate 1.Cathode Symbol ▼ IT(RMS) = 1.0A ITSM = 10A BVDRM = 600V Sensitive Gate Silicon Controlled Rectifiers TO-92 copyright @ Apollo Electron Co., Ltd. All rights reserved. This device may substitute for MCR100-6, MCR100-8.

Electrical Characteristics ( Tj = 25 °C unless otherwise noted ) Symbol Items Conditions Ratings Unit Min. Typ. Max. IDRM Repetitive Peak Off-State Current VAK = VDRM or VRRM ; RGK = 1000 Ω TC = 25 °C TC = 110°C 100 VTM Peak On-State Voltage (1) ( ITM = 1 A, Peak ) ─ 1.3 1.7 V IGT Gate Trigger Current (2) VAK = 12 V, RL=100 Ω ─ -- 200 ㎂ VGT Gate Trigger Voltage (2) VD =12 V, RL=100 Ω -- -- 0.8 V VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω Tj = 125 °C 0.2 ── V dv/dt Critical Rate of Rise Off-State Voltage 10 -- -- v/ di/dt Critical Rate of Rise On-State Voltage ITM = 2A ; Ig = 10mA ── 50 A/㎲ IH Holding Current VAK = 12 V, Gate Open Initiating Curent = 20mA --- 0.8 10 mA Rth(j-c) Thermal Impedance Junction to case ── 60 °C/W Rth(j-a) Thermal Impedance Junction to Ambient ── 150 °C/W CR100-

-50 0 50 100 150 0.1 IGT(t o IGT(25 o Junction Temperature[ o Rθ (J-C) Transient Thermal Impedance [ o C/W] Time (sec) 125 o C o C On-State Current [A] On-State Voltage [V] 100 120 140 θ = 180 o Max. Allowable Case Temperature [ o Average On-State Current [A] IGM(1A) VGD(0.2V) PG(AV)(0.1W) PGM(2W) VGM(5V) o C Gate Voltage [V] Gate Current [mA] θ : Conduction Angle 360° θ 2ππ -50 0 50 100 150 0.1 VGT(t C) VGT(25 o Junction Temperature[ o Fig 1. Gate Characteristics Fig 2. Maximum Case Temperature Fig 3. Typical Forward Voltage Fig 4. Thermal Response Fig 6. Typical Gate Trigger Current vs. Junction Temperature Fig 5. Typical Gate Trigger Voltage vs. CR100-6

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 θ = 180 o θ = 120 o θ = 90 o θ = 60 o θ = 30 o Max. Average Power Dissipation [W] Average On-State Current [A] -50 0 50 100 150 0.1 IH(t o IH(25 o Junction Temperature[ o Fig 8. Power DissipationFig 7. Typical Holding Current

Dim. mm Inch A 4.2 0.165 B 3.7 0.146 C 4.43 4.83 0.174 0.190 D 14.07 14.87 0.554 0.585 E 0.4 0.016 F 4.43 4.83 0.174 0.190 G 0.45 0.017 H2 . 5 4 0 . 1 0 0 I2 . 5 4 0 . 1 0 0 J 0.33 0.48 0.013 0.019 CR100-6 1. Cathode 2. Gate 3. Anode A B C G E F D H J I

Dim. mm Inch A 4.2 0.165 B 3.7 0.146 C 4.43 4.83 0.174 0.190 D 14.07 14.87 0.554 0.585 E 0.4 0.016 F 4.43 4.83 0.174 0.190 G 0.45 0.017 H2 .54 0 .100 I2 .54 0 .100 J 0.33 0.48 0.013 0.019 K 4.5 5.5 0.177 0.216 L 7.8 8.2 0.295 0.323 M 1.8 2.2 0.070 0.086 N 1.3 1.7 0.051 0.067 1. Cathode 2. Gate 3. Anode CR100-6 A E G H C B D F I J K L M N