CR03AM

CR03AM ARTSCHIP | Alldatasheet

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φ5.0 MAX 4.4 5.0 MAX12.5 MIN

3.9 MAX

1.3 1.25 1.25CIRCUMSCRIBE CIRCLE φ0.7 13 2 OUTLINE DRAWING Dimensions in mm JEDEC : TO-92 CATHODE ANODE GATE CR03AM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVA TION TYPE CR03AM APPLICATION Leakage protector, timer, gas ignitor ✽1. With gate to cathode resistance RGK =1kΩ . Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Conditions Commercial frequency, sine half wave, 180° conduction, Ta=47°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Unit A A A A2s W W V V A g Ratings 0.8 0.3 1.6 0.5 0.1 0.3 –40 ~ +110 –40 ~ +125 0.23 Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage ✽1 Non-repetitive peak off-state voltage ✽1 DC off-state voltage ✽1 Voltage class Unit V V V V V V MAXIMUM RATINGS 400 500 320 400 500 320 600 800 480 600 800 480

60Ω VGT TUT 1kΩ R GK A3 A2 SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ ) ✽3. IGT , VGT measurement circuit. SWITCH CR03AM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS

R th (j-a) Test conditions Tj=110°C, VRRM applied Tj=110°C, VDRM applied, RGK =1kΩ Ta=25°C, ITM =2A ,instantaneous value Tj=25°C, VD =12V, IT=0.1A ✽3 Tj=110°C, VD =1/2VDRM , RGK =1kΩ Tj=25°C, VD =12V, IT=0.1A ✽3 Tj=25°C, VD=12V, RGK =1kΩ Junction to ambient Unit mA uA V V V µA mA °C/W Typ. 2.5 Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Limits Min. 0.2 Max. 0.5 1.8 0.8 60 ✽ 2 180 ✽2. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC) B 10~ 20 C 30~ 60 Item IGT (µA) A 1 ~ 10 The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode. PERFORMANCE CURVES 101 Ta = 25°C 100 23 5 7 1 0 1 23 5 7 1 0 244 MAXIMUM ON-STATE CHARACTERISTICS ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT SURGE ON-STATE CURRENT (A) CONDUCTION TIME (CYCLES AT 60Hz)

NON-INSULATED TYPE, GLASS PASSIVATION TYPE 102 10–2 100 101 101 10–1 100 57 23 5710–1 10223 57 23 5 23 57 VFGM = 6V VGT = 0.8V (Tj = 25°C) IGT = 100µA (Tj = 25°C) PGM = 0.5W PG(AV) = 0.1W VGD = 0.2V IFGM = 0.3A 2310–3 57 1 0–2 23 57 1 0–1 23 57 1 00 200 100 120 140 160 180 23100 571 01 23 57 1 02 23 57 1 03 60–20–40 0 20 40 80 100 103 102 101 100 120 TYPICAL EXAMPLE 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0–60–40 –20 20 80 140 120 0.2 0.5 0.9 06 040 100 160 120 140 100 θ = 30° 60° 120° 90° 180° θ 360° RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 0.3 0.2 0.1 0.4 0 0.50.40 0.1 0.2 0.3 0.5 θ = 30° 60° 120° 90° 180° θ 360° RESISTIVE, INDUCTIVE LOADS MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE GATE TRIGGER VOLTAGE (V) JUNCTION TEMPERATURE ( °C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) TRANSIENT THERMAL IMPEDANCE ( °C/W) TIME (s) GATE CHARACTERISTICS GATE VOLTAGE (V) GATE CURRENT (mA) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE ( °C) 100 (%)GATE TRIGGER CURRENT (Tj=t°C ) GATE TRIGGER CURRENT (Tj=25°C ) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) AMBIENT TEMPERATURE ( °C) AVERAGE ON-STATE CURRENT (A) DISTRIBUTION IGT (25°C) = 35µA TYPICAL EXAMPLE

NON-INSULATED TYPE, GLASS PASSIVATION TYPE 160 120 140 100 0 120–40 04 0 8 0–20 20 60 100 R GK = 1kΩTYPICAL EXAMPLE 2310–1 571 00 23 57 1 01 23 57 1 02 160 100 120 140 Tj = 110°CTYPICAL EXAMPLE 0.3 0.2 0.1 0.5 0.4 θ = 30° 60° 120°90° 180° θ θ 360° RESISTIVE LOADS 0.3 0.2 0.1 0.5 0.4 θ = 30° 60° 90° 180° 270° DC 120° θ 360° RESISTIVE, INDUCTIVE LOADS 160 120 140 100 0 0.50 0.2 0.40.1 0.3 θ 360° θ = 30° 120° 180° DC 270° 60° 90° NATURAL CONVECTION RESISTIVE, INDUCTIVE LOADS 160 120 140 100 60° 120° 180°θ = 30° 90° θ θ 360° RESISTIVE LOADS NATURAL CONVECTION MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) AMBIENT TEMPERATURE ( °C) AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) AVERAGE POWER DISSIPATION (W) AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) AMBIENT TEMPERATURE ( °C) AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE GATE TO CATHODE RESISTANCE (k Ω ) 100 (%)BREAKOVER VOLTAGE (R GK = rkΩ ) BREAKOVER VOLTAGE (R GK = 1kΩ ) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE ( °C) 100 (%)BREAKOVER VOLTAGE (T j = t°C ) BREAKOVER VOLTAGE (T j = 25°C )

NON-INSULATED TYPE, GLASS PASSIVATION TYPE 23100 571 01 23 57 1 02 23 57 1 03 200 180 100 120 160 140 Tj = 25°C R GK = 1kΩ Tj = 110°C 102 23 4100 57 1 01 24 35 7 1 0 2 104 103 2310–2 10–157 2 3 571 0 0 23 5 7 1 01 100 200 300 400 500 160 120 140 100 0 120–40 04 0 8 0–20 20 60 100 TYPICAL EXAMPLE 60–20–40–60 0 20 40 80 100120140 102 R GK = 1kΩ HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (mA) JUNCTION TEMPERATURE ( °C) HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE HOLDING CURRENT (mA) GATE TO CATHODE RESISTANCE (k Ω ) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE TRIGGER CURRENT ( µA) GATE TRIGGER PULSE WIDTH ( µs) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE RATE OF RISE OF OFF-STATE VOLTAGE (V/ µs) 100 (%)BREAKOVER VOLTAGE (dv/dt = vV/µ s) BREAKOVER VOLTAGE (dv/dt = 1V/µ s) REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE ( °C) 100 (%)REPETITIVE PEAK REVERSE VOLTAGE (Tj=t°C ) REPETITIVE PEAK REVERSE VOLTAGE (Tj=25°C ) DISTRIBUTION IGT (25°C) = 35µA TYPICAL EXAMPLE VD = 12V, Tj = 25°C # 2 # 1 TYPICAL EXAMPLE I GT (25°C) IH (1kΩ ) # 1 10µA 1.0mA # 2 26µA 1.1mA Tj = 25°C TYPICAL EXAMPLE IGT (DC) # 1 16µA # 2 65µA # 1 # 2