CPW4-1200S015B WOLFSPEED | Alldatasheet

Document overview

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Technical content

Features

  • 1.2kVSchottky Rectifier
  • Zero Reverse Recovery
  • Zero Forward Recovery
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • Extremely Fast Switching
  • Positive Temperature Coefficient on VF Chip Outline VRRM = 1200 V IF = 15 A Qc = 77.5 nC Part Number Die Size Anode Cathode CPW4-1200S-015B 2.70 x 2.70 mm2 Al Ni/Ag Maximum Ratings Symbol Parameter Value Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VR DC Peak Blocking Voltage 1200 V IF Continuous Forward Current 15 A TJ=175˚C 1 IFRM Repetitive Peak Forward Surge Current 68

44 A TC=25˚C, tP=10 ms, Half Sine Pulse

TC=110˚C, tP=10 ms, Half Sine Pulse 1 IFSM Non-Repetitive Forward Surge Current 100

85 A TC=25˚C, tP=10 ms, Half Sine Pulse

TC=110˚C, tP=10 ms, Half Sine Pulse 1 IF,Max Non-Repetitive Peak Forward Current 900

750 A TC=25˚C, tP=10 ms, Pulse

TC=110˚C, tP=10 ms, Pulse TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ˚C TProc Maximum Processing Temperature 325 ˚C 10 min. maximum 1. Assumes RθJC Thermal Resistance of 0.78˚C/W or less

CPW4-1200-S015B Rev. B

Electrical Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.6 2.3 1.8

3 V IF = 15 A TJ=25°C

IF = 15 A TJ=175°C Fig. 1 IR Reverse Current 35 120 200 300 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C Fig. 2 QC Total Capacitive Charge 77.5 nC VR = 800 V, IF = 15A di/dt = 200 A/μs TJ = 25°C Fig. 3 C Total Capacitance 1200 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Fig. 4 Mechanical Parameters Parameter Typ. Unit Die Size 2.70 x 2.70 mm Anode Pad Size 2.42 x 2.42 mm Anode Pad Opening 2.14 x 2.14 mm Thickness 377 ± 10% μm Wafer Size 100 mm Anode Metalization (Al) 4 μm Cathode Metalization (Ni/Ag) 1.8 μm Frontside Passivation Polyimide

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  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree repre- sentative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Notes
  • Cree SiC Schottky diode portfolio: http://www.cree.com/diodes
  • CPW4 Spice models: http://response.cree.com/Request_Diode_model
  • SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns Related Links CPW4-1200-S015B Rev. B, 08-2018 Chip Dimensions symbol dimension mm inch A 2.7 0.106 B 2.7 0.106 C 2.14 0.084 D 2.14 0.084 A B C D