CPW3-0650-S004B WOLFSPEED | Alldatasheet

Document overview

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Technical content

Features

  • 650-Volt Schottky Rectifier
  • Zero Reverse Recovery
  • Zero Forward Recovery
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • Extremely Fast Swtitching
  • Positive Temperature Coefficient on VF Chip Outline Maximum Ratings Symbol Parameter Value Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V IF(AVG) Average Forward Current 4 A TJ=160˚C IFRM Repetitive Peak Forward Surge Current 22 A TC=25˚C, tP=10 ms, Half Sine Wave, D=0.3 1 IFSM Non-Repetitive Peak Forward Surge Current 110 A TC=25˚C, tP=10 µs, Pulse 1 TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ˚C Part Number Anode Cathode Package Marking CPW3-0650-S004B Al Ni/Ag Sawn on Foil Wafer # on Foil VRRM = 650 V IF(AVG) = 4 A Qc = 8.5 nC

CPW3-0650-S004B Rev. -

Electrical Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 1.8 1.8

2.4 V IF = 4 A TJ=25°C

IF = 4 A TJ=175°C IR Reverse Current 12 120 μA VR = 650 V TJ=25°C VR = 650 V TJ=175°C QC Total Capacitive Charge 8.5 nC VR = 650 V, IF = 4 A di/dt = 500 A/μs TJ = 25°C C Total Capacitance 251 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Note: 1. Assumes θJC Thermal Resistance of 2.02˚C/W or less Mechanical Parameters Parameter Typ. Unit Die Size 1.13 x 1.13 mm Anode Pad Size 0.98 x 0.99 mm Anode Pad Opening 0.87 x 0.88 mm Thickness 377 ± 10% μm Wafer Size 100 mm Anode Metalization (Al) 4 μm Cathode Metalization (Ni/Ag) 1.8 μm Frontside Passivation Polyimide

This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc. 3 CPW3-0650-S004B Rev. - Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power Chip Dimensions Part Number Anode Cathode Package Marking CPW3-0650-S004B Al Ni/Ag Sawn on Foil Wafer # on Foil The die-on-tape method of delivering these SiC die may be considered a means of temporary storage only. Due to an increase in adhesion over time, die stored for an extended period may affix too strongly to the tape. These die should be stored in a temperature-controlled nitrogen dry box soon after receipt. Cree will further recommend that all die be removed from tape to a waffle pack, to a similar storage medium, or used in production within 2 – 3 weeks of delivery to assure 100% release of all die without issues. A A B B symbol dimension mm inch A 1.13 0.044 B 0.98 0.039 C 0.99 0.039 C