CPW2-0600S010 WOLFSPEED | Alldatasheet

Document overview

  • PDF pages: 4

Technical content

Features

  • 600-Volt Schottky Rectifier
  • Zero Reverse Recovery
  • Zero Forward Recovery
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • Extremely Fast Switching
  • Positive Temperature Coefficient on VF Chip Outline Part Number Die Size Anode Cathode CPW2-0600-S010B 1.92 x 1.92 mm2 Al Ni/Ag Datasheet: CPW 2-0600-S010B Rev. E, 02-2017 Maximum Ratings Symbol Parameter Value Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 600 V VRSM Surge Peak Reverse Voltage 600 V VR DC Peak Blocking Voltage 600 V IF Continuous Forward Current 14.5 A TC=25˚C TC=135˚C TC=153˚C IFRM Repetitive Peak Forward Surge Current 46

31 A TC=25˚C, tP = 10 ms, Half Sine Wave

TC=110˚C, tP=10 ms, Half Sine Wave 1 IFSM Non-Repetitive Peak Forward Surge Current 90

71 A TC=25˚C, tp = 10 ms, Half Sine Wave

TC=110˚C, tp = 10 ms, Half Sine Wave 1 IF,Max Non-Repetitive Peak Forward Surge Current 860

680 A TC=25˚C, tP = 10 µs, Pulse

TC=110˚C, tP = 10 µs, Pulse dV/dt Diode dV/dt ruggedness 200 V/ns VR=0-600V ∫i2dt i2t value 40.5

25 A2s TC=25˚C, tP=10 ms

TC=110˚C, tP=10 ms 1 TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ˚C TProc Maximum Processing Temperature 325 ˚C 10 min. maximum 1. Assumes RθJC Thermal Resistance of 1.1˚C/W or less VRRM = 600 V IF(AVG) = 10 A Qc = 24 nC

CPW2-0600-S010B Rev. E, 02-2017

Electrical Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.0 1.8

2.4 V IF = 10 A TJ=25°C

IF = 10 A TJ=175°C Fig. 1 IR Reverse Current 10 200 μA VR = 600 V TJ=25°C VR = 600 V TJ=175°C Fig. 2 QC Total Capacitive Charge 24 nC VR = 400 V, IF = 10 A di/dt = 500 A/μs TJ = 25°C Fig. 3 C Total Capacitance 460.5 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 4 EC Capacitance Stored Energy 3.6 μJ VR = 400 V Mechanical Parameters Parameter Typ. Unit Die Size 1.92 x 1.92 mm Anode Pad Size 1.65 x 1.65 mm Anode Pad Opening 1.45 x 1.45 mm Thickness 377 ± 10% μm Wafer Size 100 mm Anode Metalization (Al) 4 μm Cathode Metalization (Ni/Ag) 1.8 μm Frontside Passivation Polyimide

CPW2-0600-S010B Rev. E 02-2017 Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Notes
  • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
  • Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
  • SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Related Links Chip Dimensions symbol dimension mm inch A 1.92 0.076 B 1.45 0.057 A A B B