CPM3-1200-0013A WOLFSPEED | Alldatasheet

Document overview

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  • PDF pages: 7

Technical content

Features

  • C3M SiC MOSFET technlogy
  • High Blocking Voltage with Low RDS(on)
  • Easy to parallel and simple to drive
  • Resistant to Latch-up
  • High Gate Resistance for Drives Benefits
  • Higher System Efficiency
  • Low Conduction Losses over Temperature
  • Reduced Cooling Requirements
  • Increased System Switching Frequency

Applications

  • Automotive drive-train
  • Motor drives
  • Solid State Circuit Braker
  • Resonant topologies Inner Circuit VDS 1200 V I D @ 25˚C 149 A RDS(on) 13 mΩ Maximum Ratings Symbol Parameter Value Unit VDSmax Drain - Source Voltage, Tvj ≥ -55 ˚C 1200 V VGSmax, AC Max Transient Gate - Source Voltage -8/+19 V ID Continuous Drain Current, tp limited by Tvjmax, VGS = 15V, assumes Rth(j-c) < 0.28 K/W TC = 25 ˚C 149 A TC = 100 ˚C 102 ID(pulse) Pulsed Drain Current, tp limited by Tvjmax 300 A TVJ , Tstg Virtual Junction and Storage Temperature -55 to +175 ˚C TProc Maximum Processing Temperature, in non-reactive ambient environment 325 ˚C 1 Recommended turn off / turn on gate voltage VGS -4...0/+15V

2 Verified by design

All parameters 100% tested at room temperature. Non-room temperature parameters are validated by design and statistical correlation. Stress beyond those listed under absolute maximum ratings may cause permanent damage to the device. Exposure to absolute-maximum-rated conditions for an extended periods may affect device reliability. Part Number Die Size (mm) CPM3-1200-0013A Please contact your sales representative to get the detailed information about die layout and dimensions. (G) Gate (D) Drain (S) Source

CPM3-1200-0013A Rev. 2, 02-2020

Electrical Characteristics

Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage

1200 V VGS = 0 V, ID = 100 μA, TVJ = 25ºC

1200 V VGS = 0 V, ID = 100 μA TVJ = -55ºC

VGS(th) Gate Threshold Voltage 1.8 2.5 3.6 V VDS = VGS, ID = 27.9 mA, TVJ = 25ºC Fig. 11 2.0 V VDS = VGS, ID = 27.9 mA, TVJ = 175ºC IDSS Zero Gate Voltage Drain Current 1 40 μA VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 9 13 17 mΩ VGS = 15 V, ID = 100 A, TVJ = 25ºC Fig. 4, 5, 621 VGS = 15 V, ID = 100 A, TVJ = 175ºC gfs Transconductance S VDS= 20 V, IDS= 100 A, TVJ = 25ºC Fig. 7

72 VDS= 20 V, IDS= 100 A, TVJ = 175ºC

Ciss Input Capacitance 7560 pF VGS = 0 V, VDS = 1000 V f = 100 kHz VAC = 25 mV Fig. 17, 18Coss Output Capacitance 284 Crss Reverse Transfer Capacitance 18 Eoss Coss Stored Energy 161 μJ Fig. 16 RG(int) Internal Gate Resistance 6.7 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 77 nC VDS = 800 V, VGS = -4 V/15 V IDS = 100 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 95 Qg Total Gate Charge 260 Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 4.6 V VGS = -4 V, ISD = 50 A, TVJ = 25 °C Fig. 8, 9, 104.2 V VGS = -4 V, ISD = 50 A, TVJ = 175 °C trr Reverse Recover time 43 ns VGS = -4 V, IF = 100 A, VR = 800 V dif/dt = 3000 A/µs, TVJ = 175 °CQrr Reverse Recovery Charge 1800 nC Irrm Peak Reverse Recovery Current 65 A Note: When using SiC Body Diode the maximum recommended VGS = -4V

CPM3-1200-0013A Rev. 2, 02-2020 Revision Number Date of Change Brief Summary - 04/02/2019 Initial Release 1 12/4/2019

  • Removed test conditions and note section from the Maximum Ratings Table
  • Updated description for all the parameters in the Maximum Ratings Table
  • Updated footnotes
  • Temperature note removed and embedded into every test condition
  • Updated test conditions for gate threshold voltage, drain-source on-state resis- tance, transconductance, gate to source charge, gate to drain charge, total gate charge, diode forward voltage, reverse recovery time, reverse recovery charge and peak reverse recovery current
  • Updated typical values for continuous drain current, zero gate voltage drain current, gate-source leakage current, drain-source on-state resistance, transconductance, in- put capacitance, reverse transfer capacitance, Coss stored energy, gate too source charge, gate to drain charge, total gate charge, reverse recovery time and reverse recovery charge
  • All junction temperatures changed to virtual junction temperatures 2 02/24/2020
  • Footnotes updated
  • Mechanical parameters corrected
  • All graphs updated to reflect the most recent test data

Revision History

CPM3-1200-0013A Rev. 2, 02-2020 Copyright © 2015 - 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

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  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes Related Links
  • SiC MOSFET Isolated Gate Driver reference design: www.wolfspeed.com/power/Tools-and-Support
  • Application Considerations for Silicon-Carbide MOSFETs: www.wolfspeed.com/power/Tools-and-Support