CPM2-1200-0080A WOLFSPEED | Alldatasheet

Document overview

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  • PDF pages: 7

Technical content

Features

  • High Blocking Voltage with Low On-Resistance
  • High Speed Switching with Low Capacitances
  • Easy to Parallel and Simple to Drive
  • Avalanche Ruggedness Benefits
  • Higher System Efficiency
  • Reduced Cooling Requirements
  • Increased Power Density
  • Increased System Switching Frequency

Applications

  • Solar Inverters
  • High Voltage DC/DC Converters
  • Motor Drives
  • Switch Mode Power Supplies
  • Pulsed Power applications Chip Outline Part Number Die Size (mm) CPM2-1200-0080A 3.10 x 3.36 Note (1): Assumes a RθJC < 0.65 K/W Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values, AC (f >1 Hz) VGSop Gate - Source Voltage -5/+20 V Recommended operational values ID Continuous Drain Current A VGS = 20 V, TC = 25˚C Note 1

24 VGS = 20 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 80 A Pulse width tP limited by Tjmax TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C TProc Maximum Processing Temperature 325 ˚C 10 min. maximum VDS 1200 V I D @ 25˚C 36 A RDS(on) 80 mΩ

CPM2-1200-0080A Rev. 1, 09-2020 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 2.0 2.9 4 V VDS = VGS , ID = 5 mA Fig. 11

2.4 V VDS = VGS, ID = 5 mA, TJ = 150ºC

IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 80 98 mΩ VGS = 20 V, ID = 20 A Fig. 4, 5, 6144 VGS = 20 V, ID = 20A, TJ = 150ºC gfs Transconductance S VDS= 20 V, IDS= 20 A Fig. 7

9 VDS= 20 V, IDS= 20 A, TJ = 150ºC

Ciss Input Capacitance 1130 pF VGS = 0 V VDS = 1000 V f = 1 MHz VAC = 25 mV Fig. 17, 18Coss Output Capacitance 92 Crss Reverse Transfer Capacitance 7.5 Eoss Coss Stored Energy 50 μJ Fig. 16 RG(int) Internal Gate Resistance 3.9 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 17 nC VDS = 800 V, VGS = -5/20 V ID = 20 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 29 Qg Total Gate Charge 71 Reverse Diode Characteristic Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 4.3 V VGS = - 5 V, ISD = 10 A Fig. 8, 9, 103.8 V VGS = - 5 V, ISD = 10 A, TJ = 150 °C IS Continuous Diode Forward Current 36 A TC = 25˚C Note 2 trr Reverse Recover time 24 ns VGS = - 5 V, ISD = 20 A, VR = 800 V dif/dt = 2400 A/µs Note 2Qrr Reverse Recovery Charge 152 nC Irrm Peak Reverse Recovery Current 10 A Note (2): When using SiC Body Diode the maximum recommended VGS = -5V Note (3): For inductive and resistive switching data and waveforms please refer to datasheet for packaged device - Part Number C2M0080120D.

Parameter Typical Value Unit Die Dimensions (L x W) 3.10 × 3.36 mm Exposed Source Pad Metal Dimensions (LxW) Each 1.04 × 1.43 mm Gate Pad Dimensions (L x W) 0.80 × 0.50 mm Die Thickness 180 ± 20 µm Top Side Source metallization (Al) 4 µm Top Side Gate metallization (Al) 4 µm Bottom Drain metallization (Ni/Au) 0.8 / 0.6 µm Chip Dimensions Mechanical Parameters 66 CPM2-1200-0080A Rev. 1, 09-2020

This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. ademarks and Z-REC and Z-FET are trademarks of Cree, Inc.7 CPM2-1200-0080B Rev. C, 01-2016 Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power77 CPM2-1200-0080A Rev. 1, 09-2020 Copyright © 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power Notes

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links
  • C2M PSPICE Models: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Isolated Gate Driver reference design: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Evaluation Board: http:/ /wolfspeed.com/power/tools-and-support