CPM2-1200-0040A WOLFSPEED | Alldatasheet

Document overview

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Technical content

Features

  • C2M SiC MOSFET technlogy
  • High Blocking Voltage with Low On-Resistance
  • High Speed Switching with Low Capacitances
  • Easy to Parallel and Simple to Drive
  • Avalanche Ruggedness
  • Resistant to Latch-Up
  • Halogen Free, RoHS Compliant Benefits
  • Higher System Efficiency
  • Reduced Cooling Requirements
  • Increased Power Density
  • Increased System Switching Frequency

Applications

  • Solar Inverters
  • Switch Mode Power Supplies
  • High Voltage DC/DC converters
  • Battery Chargers
  • Motor Drives
  • Pulsed Power Applications Chip Outline Part Number Die Size (mm) CPM2-1200-0040A 3.10 x 5.90 VDS 1200 V I D @ 25˚C 60 A RDS(on) 40 mΩ Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage (dynamic) -10/+25 V AC (f >1 Hz) Note 1 VGSop Gate - Source Voltage (static) -5/+20 V Static Note 2 ID Continuous Drain Current A VGS = 20 V, TC = 25˚C Note 3

44 VGS = 20 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 170 A Pulse width tP limited by Tjmax TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ˚C TProc Maximum Processing Temperature 325 ˚C 10 min. maximum Note (1): When using MOSFET Body Diode VGSmax = -5V/+25V Note (2): MOSFET can also safely operate at 0/+20 V Note (3): Assumes a RθJC < 0.38 K/W

CPM2-1200-0040A Rev. 1, 11-2020 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 2.0 3.1 4 V VDS = VGS , ID = 10mA Fig. 11

2.3 V VDS = VGS , ID = 10mA, TJ = 175 °C

IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 20 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 40 52 mΩ VGS = 20 V, ID = 40 A Fig. 4,5,6

90 VGS = 20 V, ID = 40 A, TJ = 175 °C

S VDS= 20 V, IDS= 40 A Fig. 7

17 VDS= 20 V, IDS= 40 A, TJ = 175 °C

Ciss Input Capacitance 2287 pF VGS = 0 V VDS = 1000 V f = 1 MHz VAC = 25 mV Fig. 17,18Coss Output Capacitance 157 Crss Reverse Transfer Capacitance 8 Eoss Coss Stored Energy 85 μJ Fig 16 RG(int) Internal Gate Resistance 2.7 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 29 nC VDS = 800 V, VGS = -5/20 V ID = 40 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 45 Qg Total Gate Charge 131 Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 4.2 V VGS = - 5 V, ISD = 20 A, TJ = 25 °C Fig. 8, 9,

103.7 V VGS = - 5 V, ISD = 20 A, TJ = 175 °C

IS Continuous Diode Forward Current 60 A TC= 25 °C Note 1 trr Reverse Recovery Time 63 ns VGS = - 5 V, ISD = 40 A, TJ = 25 °C VR = 800 V dif/dt = 1406 A/µs Note 1Qrr Reverse Recovery Charge 964 nC Irrm Peak Reverse Recovery Current 18 A

CPM2-1200-0040A Rev. 1, 11-2020 Parameter Typical Value Unit Die Dimensions (L x W) 3.10 x 5.90 mm Exposed Source Pad Metal Dimensions (LxW) Each 1.04 x 3.97 (x2) mm Gate Pad Dimensions (L x W) 0.80 x 0.50 mm Die Thickness 180 ± 40 µm Top Side Source metallization (Al) 4 µm Top Side Gate metallization (Al) 4 µm Bottom Drain metallization (Ni/Au) 0.8 / 0.1 µm Chip Dimensions Mechanical Parameters

CPM2-1200-0040A Rev. 1, 11-2020 Copyright © 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.wolfspeed.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes Related Links
  • C2M PSPICE Models: www.wolfspeed.com/power
  • SiC MOSFET Isolated Gate Driver reference design: www.wolfspeed.com/power
  • Application Considerations for Silicon-Carbide MOSFETs: www.wolfspeed.com/power