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◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 8 A ) * TO-252(DPAK) AND TO-251(IPAK) PACKAGE AVAILABLE General Description Apollo Electron’s SCR is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection, mo tor control circuit in power tool, inrush cur- rent limit circuit and heating control system. 2. Anode 3.Gate 1.Cathode Symbol ▼ IT(RMS) = 8 A ITSM = 70A BVDRM = 600V TO-220 1 2 3 copyright @Apollo Electron Co.,Ltd All rights reserved ABSOLUTE MAXIMUM RATINGS Symbol Value Units Tstg -40~150 ℃ T j -40~110 ℃ VDRM 600 V VRRM 600 V IT(RMS) 8 A IT(AV) 5 A Non Repetitive Surge Peak On-State Current(T j=25℃) tp=10ms 70 tp=8.3ms 73 I²t 24.5 A²s IGM 4 A PG(AV) 1 W Paramter Repetitive Peak Off-State Voltage T j=25℃ Repetitive Peak Reverse Voltage RMS On-State Current (180° conduction angle) TI=105℃ Average On-Stage Current (180° conduction angle) TI=105℃ I²t Value For Fusing tp=10ms Peak Gate Current tp=20us, T j=125℃ Average Gate Power Dissipation T j=125℃ Critical Rate Of Rise Of On-State Current IG=2ｘIGT, tr≤100ns, f=50Hz, T j=110℃ Storage Junction Temperature Range Operating Junction Temperature Range dl/dt I TSM A
50 A/us
ELECTRICAL CHARACTERISTICS (T j=25℃ unless otherwise specified) Symbol Unit IGT MAX 100 uA VGT MAX 0.8 V VGD VD=VDRM RL=3.3KΩ RGK=220Ω T j=125℃ MIN 0.1 V IL IG=1mA RGK=1KΩ MAX 6 mA IH IT=50mA RGK=1KΩ MAX 5 mA VTM IT=16A tp=380uS T j=25℃ MAX 1.6 V dv/dt VD=65% VDRM RGK=220Ω MIN 5 V/μs IDRM VDRM=VRRM RGK=220Ω T J=25℃ 5 uA IRRM VDRM=VRRM RGK=220Ω T J=125℃ 1 mA RGK 6~35 KΩ THERMAL RESISTANCES Symbol Value Unit Rth(J-c) 20 ℃/W Parameter Junction To Case(DC) MAX VD=6V RL=140Ω Test Condition
Fig 2. Maximum Case Temperature Fig 1 Maximum Average Power Dissipation Fig 2 Average And D.C. On-State Current vs. Average On-State Current vs. Lead Temperature Fig.3 Surge Peak On-State Current vs. Number Of Cycles Fig.4 Non-Repetitive Surge Peak On-State Current For a Sinusoidal Pulse With Width tp < 10ms, And Corresponding Value Of I²t Fig.5 Relative Variation Of Gate Trigger Current, Holding Current and Latching Current vs. Junction Temperature (typical values) Fig.6 On-State Characteristics (maximum values) CP8C60SR
A 0.14 0.19 3.56 4.83 A1 0.02 0.055 0.51 1.4 A2 0.08 0.115 2.03 2.92 b 0.015 0.04 0.38 1.02 b2 0.045 0.07 1.14 1.78 c 0.014 0.024 0.36 0.61 D 0.56 0.65 14.22 16.51 e 0.096 0.104 2.44 2.64 E 0.38 0.42 9.65 10.67 H1 0.23 0.27 5.84 6.86 L 0.5 0.58 12.7 14.73 L1 - 0.25 - 6.35 ￠P 0.139 0.161 3.53 4.09 Q 0.1 0.135 2.54 3.43 INCHES MILLIMETERSDIM