CMT9926G CHAMP | Alldatasheet

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 1 GENERAL DESCRIPTION

FEATURES

‹ 20V N-Channel Enhancement-Mode MOSFET ‹ Vds=20V ‹ R DS(ON)=30 mΩ (TYP.) , VGS @2.5V, Ids@5.2A ‹ R DS(ON)=22 mΩ (TYP.), VGS @4.5V, Ids@6A

APPLICATIONS

‹ Power Management in Notebook ‹ Portable Equipment ‹ Battery Powered System ‹ DC/DC Converter ‹ Load Switch ‹ DSC ‹ LCD Display inverter ‹ Advanced trench process technology ‹ High Density Cell Design For Ultra Low On-Resistance ‹ High Power and Current handing capacity ‹ Fully Characterized Avalanche Voltage and Current ‹ Ideal for Li ion battery pack applications PIN CONFIGURATION SYMBOL 8-PIN SOP (S08) Top View N-Channel MOSFET

ORDERING INFORMATION

*Note: G : Suffix for Pb Free Product

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 2 ABSOLUTE MAXIMUM RATINGS (TA=25℃ unless otherwise notes) Rating Symbol Value Unit Drain- to- Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS ±12 V Continuous Drain Current (TJ=150℃) (TA=25℃) ID 6 A Pulsed Drain Current IDM 20 A Maximum Power Dissipation TA=25℃ PD 2.0 W TA=75℃ PD 1.3 W Operating Junction Temperature Range TJ -55 to150 ℃ Storage Temperature Range TSTG -55 to 150 ℃ Thermal Resistance Junction-ambient (PCB mount) Rthj-a 62.5 ℃/W Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation 2 . 1 - i n2 2oz Cu PCB board 3. Guaranteed by design ; not subject to production testing

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 3

ELECTRICAL CHARACTERISTICS

(TA=25℃ unless otherwise notes) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA 20 - - V VGS=4.5V, ID=6A - 22 28 mΩ RDS(ON) Static Drain-Source On-Resistancem VGS=2.5V, ID=5.2A - 30 40 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA 0.6 - - V gfs Forward Transconductance VDS=10V, ID=6A 7 13 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA Gate-Source Forward Leakage VGS=12V - - 100 nA IGSS Gate-Source Reverse Leakage VGS=-12V - - -100 nA Qg Total Gate Charge - 4.86 - nC Qgs Gate-Source Charge - 0.92 - nC Qgd Gate-Drain ("Miller") Charge ID=6A VDS=10V VGS=4.5V - 1.4 - nC td(on) Turn-on Delay Time - 8.1 - ns tr Rise Time - 9.95 - ns td(off) Turn-off Delay Time - 21.85 - ns tf Fall Time VDD=10V ID=1A RG=6Ω VGEN=4.5V - 5.35 - ns Ciss Input Capacitance - 562 - pF Coss Output Capacitance - 106 - pF Crss Reverse Transfer Capacitance VGS=0V VDS=8V f=1.0MHz - 75 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Diode Forward Voltage Tj=25℃ , IS=1.7A, VGS=0V - - 1.2 V Is Max. Diode Forward Current - - 1.7 A Notes: Pulse test : Pulse width <300us , duty cycle <2%.

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 4 TYPICAL CHARACTERISTICS

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 5

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 6 PACKAGE DIMENSION 8-PIN SOP (S08)

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2007/01/02 Rev1.0 Champion Microelectronic Corporation Page 7 IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated ci rcuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Us e of CMC products in such applications is understood to be fully at the risk of the cust omer. In order to minimize risks associated with the customer’s applications, th e customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan T E L : +886-3-567 9979 T E L :+886-2-2788 0558 FAX: +88 6-3-567 9909 FAX: +886-2-2788 2985