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2009/06/22 Rev. 1.0 Champion Microelectronic Corporation Page 1 GENERAL DESCRIPTION The CM03X provides excellent R DS (ON) and low gate charge by using advanced BiCMOS technology. The CM03X is designed to reduce the no load consumption or so called Phantom power for AC Adapter, Desk Top PC power supply, LCD Power Supply and others. PIN CONFIGURATION
FEATURES
♦ No load consumption can be reduced ~180mW for EPA/Climate Saver Application to reduce the phantom power. RDS (ON) = 176 Ω (typ.) @VGS = 5V/ ID=10mA ♦ RDS (ON) = 200 Ω (typ.) @VGS = 2.5V/ ID=10mA ♦ Reliable and rugged ♦ Package DIP-8Pin SYMBOL N-Channel
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (TA=25 °C, unless otherwise specified) THERMAL DATA DIP-8 Pin Top View Part Number Temperature Range Package CM03XIP* -55°C to 150°C 8-Pin DIP (P8) *Note: X : Suffix for Halogen Free and PB Free Product PARAMETER Symbol RATINGS Unit Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS +20/-0.3 V Continuous Drain Current * ID 25 mA Pulsed Continuous Drain Current * IDM 200 mA Power Dissipation PD(MAX) 1.35 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C * : Surface Mounted on 1 in2 pad area, t ≦10sec PARAMETER Symbol Min TYP MAX Unit Junction to Ambient * θJA 74 110 °C/W * : Surface Mounted on 1 in2 pad area, t ≦ 10sec
2009/06/22 Rev. 1.0 Champion Microelectronic Corporation Page 2 CM03X REMOVE PHANTOM POWER
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TA = 25 °C. PARAMETER SYMBOL TEST CONDITIONS CM03X Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V,lD=40μA 650 V Drain-Source Leakage Current IDSS VDS=650V, VGS=0V 1 μA Gate-Source Leakage Current IGSS VDS=0V, VGS=±20V ±20 μA ON CHARACTERISTICS Gate Threshold Voltage VGS (TH) VDS= VGS, ID=250μA 0.5 0.7 0.9 V Drain-Source On-State Resistance (Note 1) RDS (ON) VGS=5V, ID =10mA 176 250 Ω VGS=2.5V, ID =10mA 200 250 Ω SWITCHING CHARACTERISTICS Turn-On Delay Time (Note 1) tD(ON) VDS=50V, VGS=5V, RG=3Ω, RL=2.7Ω 20 ns Turn-On Rise Time tR 16 ns Turn-Off Delay Time tD (OFF) 4 μs Turn-Off Fall Time tF 3.7 μs Gate-Source Charge QGS VDS=50V, VGS=10V, ID =25mA 1 nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note 1) VSD lS=25 mA, VGS=0V 0.76 1 V Diode Continuous Forward Current (Note 2) IS 25 mA Note 1 : Pulse width ≦300μs, duty cycle ≦ 2% . Note 2 : Surface Mounted on 1 in2 pad area, ≦ 10sec
2009/06/22 Rev. 1.0 Champion Microelectronic Corporation Page 3 CM03X REMOVE PHANTOM POWER TYPICAL ELECTRICAL CHARACTERISTICS
Rev. 1.0 GE DIMENS Cham SION mpion Microe lectronic Corpo ration REMOVE P P CM0 PHANTOM P age 4 03X POWER
2009/06/22 Rev. 1.0 Champion Microelectronic Corporation Page 5 CM03X REMOVE PHANTOM POWER IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing Science-Based Industrial Park, Taipei County 22102, HsinChu City, Taiwan Taiwan R.O.C T E L : +886-3-567 9979 T E L : +886-2-2696 3558 FAX: +886-3-567 9909 F A X : +886-2-2696 3559