CMT05N50_06 CHAMP | Alldatasheet

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Technical content

FEATURES

This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, conveters, solenoid and relay drivers. ‹ Higher Current Rating ‹ Lower r DS(ON), Lower Capacitances ‹ Lower Total Gate Charge ‹ Tighter VSD Specifications ‹ Avalanche Energy Specified PIN CONFIGURATION SYMBOL TO-220/TO-220FP Top View 1 23 GATE DRAIN SOURCE D S G N-Channel MOSFET

ORDERING INFORMATION

Drain to Current － Continuous － Pulsed (Note 1) ID IDM 5.0 A Gate-to-Source Voltage － Continue VGS ±20 V Total Power Dissipation Derate above 25 ℃ PD 96 0.77 W W/℃ Single Pulse Avalanche Energy (Note 2) EAS 125 mJ Operating and Storage Temperature Range TJ, TSTG -55 to 150 ℃ Thermal Resistance － Junction to Case － Junction to Ambient θJC θJA 1.70 ℃/W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 300 ℃ 2006/10/11 Rev. 1.1 Champion Microelectronic Corporation Page 1

2006/10/11 Rev. 1.1 Champion Microelectronic Corporation Page 2

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25℃. CMT05N50 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage ( V GS = 0 V, ID = 250 μA) V(BR)DSS 500 V Drain-Source Leakage Current (VDS = 500V, VGS = 0 V) IDSS μA Gate-Source Leakage Current-Forward ( V gsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse ( V gsr = -20 V, VDS = 0 V) IGSSR -100 nA Gate Threshold Voltage ( V DS = VGS, ID = 250 μA) VGS(th) 2.0 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.7A) (Note 4) RDS(on) 1.5 Ω Forward Transconductance (VDS = 15V, ID = 2.5 A) (Note 4) gFS 2.8 mhos Input Capacitance Ciss 520 730 pF Output Capacitance Coss 170 240 pF Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Crss 11 20 pF Turn-On Delay Time td(on) 7.0 10 ns Rise Time tr 9.0 20 ns Turn-Off Delay Time td(off) 20 40 ns Fall Time (VDD = 250 V, ID = 5 A, RG = 9.1Ω, VGS = 10 V) (Note 4) tf 10 20 ns Total Gate Charge Qg 10 nC Gate-Source Charge Qgs 2 nC Gate-Drain Charge (VDS = 400V, ID = 5A VGS = 10 V) (Note 4) Qgd 3 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH SOURCE-DRAIN DIODE CHARACTERISTICS Reverse Recovery Charge Qrr 1.8 μC Forward Turn-On Time ton Reverse Recovery Time IF = 5A, di/dt = 100A/μs , TJ = 25℃ trr 415 ns Diode Forward Voltage IS = 5A, VGS = 0 V VSD 1.5 V Note (1) Repetitive rating; pulse width limited by max. junction temperature (2) V DD = 100V, VGS = 10V, L=10mH, IAS = 5A, RG = 25Ω (3) I SD ≦ 4.5A, di/dt ≦ 75A/ μs, VDD ≦ V (BR)DSS, TJ ≦ 150℃ Negligible, Dominated by circuit inductance

TYPICAL ELECTRICAL CHARACTERISTICS 2006/10/11 Rev. 1.1 Champion Microelectronic Corporation Page 3

e D E A b c φ L F A c D F φ e b Front View Side View E E1L PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE TO-220FP K M H I J A C B D E G Q b R P O N M N Front View Side View Back View I J H K C B Q DE P G b1 b2 e A b O R e R1.60 R1.50 R1.50 R3.18± 0.10 2006/10/11 Rev. 1.1 Champion Microelectronic Corporation Page 4

2006/10/11 Rev. 1.1 Champion Microelectronic Corporation Page 5 IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated ci rcuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Us e of CMC products in such applications is understood to be fully at the risk of the cust omer. In order to minimize risks associated with the customer’s applications, th e customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan T E L : +886-3-567 9979 T E L :+886-2-2788 0558 FAX: +88 6-3-567 9909 FAX: +886-2-2788 2985