CMT9435G CHAMP | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

P-CHANNEL ENHANCEMENT MODE MOSFET 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 1 GENERAL DESCRIPTION

FEATURES

‹ V DS=-30V , ID=-5.3A ‹ R DS(ON) , VGS@-10V , IDS@ -5.3A = 60mΩ ‹ R DS(ON) , VGS@-4.5V , IDS@ -4.2A = 90mΩ

APPLICATIONS

‹ Power Management in Notebook ‹ Portable Equipment ‹ Battery Powered System ‹ DC/DC Converter ‹ Load Switch ‹ DSC ‹ LCD Display inverter ‹ Advanced trench process technology ‹ High Density Cell Design For Ultra Low On-Resistance ‹ Fully Characterized Avalanche Voltage and Current ‹ Improved Shoot –Through FOM PIN CONFIGURATION SYMBOL 8-PIN SOP (S08) Top View P-Channel MOSFET

ORDERING INFORMATION

*Note: G : Suffix for Pb Free Product

P-CHANNEL ENHANCEMENT MODE MOSFET 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 2 ABSOLUTE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Rating Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -5.3 A Pulsed Drain Current IDM -20 A TA=25℃ 2.5 Maximum Power Dissipation TA=75℃ PD W Operating Junction Temperature Range TJ -55 to150 ℃ Storage Temperature Range TSTG -55 to 150 ℃ Junction-to-Ambient Thermal Resistance (PCB mount) RqJA 50 ℃/W Junction-to-Case Thermal Resistance RqJC 30 ℃/W Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation 2 . 1 - i n2 2oz Cu PCB board 3. Guaranteed by design ; not subject to production testing

P-CHANNEL ENHANCEMENT MODE MOSFET 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 3

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25℃. C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units Static BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V RDS(ON) Drain-Source On-State Resistance VGS=-10V, ID=-5.3A - 50 60 mΩ RDS(ON) Drain-Source On-State Resistance VGS=-4.5V, ID=-4.2A - 75 90 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1.0 -1.5 -3.0 V gfs Forward Transconductance VDS=10V, ID=6A 4 7 - S IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V - - -1 uA IGSS Gate-Body Leakage VGS=±20V , VDS=0V - - ±100 nA Dynamic Qg Total Gate Charge - 9.52 - nC Qgs Gate-Source Charge - 3.43 - nC Qgd Gate-Drain Charge ID=-5.3A VDS=-15V VGS=-10V - 1.71 - nC td(on) Turn-On Delay Time - 10.8 - ns tr Turn-On Rise Time - 2.33 - ns td(off) Turn-Off Delay Time - 23.53 - ns tf Turn-Off Fall Time VDD=-15V ID=-1A RG=6Ω,VGEN=-10V RL=15Ω - 3.87 - ns Ciss Input Capacitance - 551.57 - pF Coss Output Capacitance - 90.96 - pF Crss Reverse Transfer Capacitance VGS=0V VDS=-15V f=1.0MHz - 60.79 - pF Source-Drain Diode Is Max. Diode Forward Current - - -1.9 A VSD Diode Forward Voltage IS=-5.3A, VGS=0V, - - -1.3 V Notes: 1.Pulse test : Pulse width <300us , duty cycle <2%.

P-CHANNEL ENHANCEMENT MODE MOSFET 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 4 TYPICAL CHARACTERISTICS

P-CHANNEL ENHANCEMENT MODE MOSFET 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 5

P-CHANNEL ENHANCEMENT MODE MOSFET 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 6 PACKAGE DIMENSION 8-PIN SOP (S08)

P-CHANNEL ENHANCEMENT MODE MOSFET 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 7 IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated ci rcuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Us e of CMC products in such applications is understood to be fully at the risk of the cust omer. In order to minimize risks associated with the customer’s applications, th e customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan T E L : +886-3-567 9979 T E L :+886-2-2788 0558 FAX: +88 6-3-567 9909 FAX: +886-2-2788 2985