CMT60N06G CHAMP | Alldatasheet

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Technical content

N-CHANNEL Logic Level Power M OSFET APPLICATION

FEATURES

‹ DC motor control ‹ UPS ‹ Class D Amplifier VDSS RDS(ON) Typ. ID 60V 15.8mΩ 60A ‹ Low ON Resistance ‹ Low Gate Charge ‹ Peak Current vs Pulse Width Curve ‹ Inductive Switching Curves PIN CONFIGURATION SYMBOL TO-220 Front View 1 23 GATE DRAIN SOURCE D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain to Source Voltage (Note 1) VDSS 60 V Drain to Current － Continuous Tc = 25 ℃, VGS@10V － Continuous Tc = 100 ℃, VGS@10V － Pulsed Tc = 25 ℃, VGS@10V (Note 2) ID ID IDM 241 A Gate-to-Source Voltage － Continue VGS ±20 V Total Power Dissipation Derating Factor above 25 ℃ PD 150 1.0 W W/℃ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, TSTG -55 to 175 ℃ Single Pulse Avalanche Energy L=144μH,ID=40 Amps EAS 500 mJ Maximum Lead Temperature for Soldering Purposes TL 300 ℃ Maximum Package Body for 10 seconds TPKG 260 ℃ Pulsed Avalanche Rating IAS 60 A THERMAL RESISTANCE Symbol Parameter Min Typ Max Units Test Conditions RθJC Junction-to-case 1.0 ℃/W Water cooled heatsink, P D adjusted for a peak junction temperature of +175℃ RθJA Junction-to-ambient 62 ℃/W 1 cubic foot chamber, free air 2006/03/07 Rev 1.1 Champion Microelectronic Corporation Page 1

N-CHANNEL Logic Level Power M OSFET 2006/03/07 Rev 1.1 Champion Microelectronic Corporation Page 2

ORDERING INFORMATION

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25℃. CMT60N06G Characteristic Symbol Min Typ Max Units OFF Characteristics Drain-to-Source Breakdown Voltage ( V GS = 0 V, ID = 250 μA) VDSS 60 V Breakdown Voltage Temperature Coefficient (Reference to 25℃, ID = 250 μA) ΔVDSS/ΔTJ 0.069 mV/℃ Drain-to-Source Leakage Current (VDS = 60 V, VGS = 0 V, TJ = 25℃) (VDS = 48 V, VGS = 0 V, TJ = 150℃) IDSS 250 μA Gate-to-Source Forward Leakage ( V GS = 20 V) IGSS 100 nA Gate-to-Source Reverse Leakage ( V GS = -20 V) IGSS -100 nA ON Characteristics Gate Threshold Voltage ( V DS = VGS, ID = 250 μA) VGS(th) 1.0 2.0 3.0 V Static Drain-to-Source On-Resistance (Note 4) ( V GS = 10 V, ID = 60A) RDS(on) 15.8 mΩ Forward Transconductance (VDS = 15 V, ID = 60A) (Note 4) gFS 36 S Dynamic Characteristics Input Capacitance Ciss 1430 pF Output Capacitance Coss 420 pF Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Crss 88 pF Total Gate Charge (VGS = 10 V) Qg 37.7 nC Gate-to-Source Charge Qgs 8.4 nC Gate-to-Drain (“Miller”) Charge (VDS = 30 V, ID = 60 A, VGS = 10 V) (Note 5) Qgd 9.8 nC Resistive Switching Characteristics Turn-On Delay Time td(on) 12.1 ns Rise Time trise 64 ns Turn-Off Delay Time td(off) 69 ns Fall Time (VDD = 30 V, ID = 60 A, VGS = 10 V, RG = 9.1Ω) (Note 5) tfall 39 ns Source-Drain Diode Characteristics Continuous Source Current (Body Diode) IS 60 A Pulse Source Current (Body Diode) Integral pn-diode in MOSFET ISM 241 A Diode Forward On-Voltage (IS = 60 A, VGS = 0 V) VSD 1.5 V Reverse Recovery Time trr 55 ns Reverse Recovery Charge (IF = 60A, VGS = 0 V, di/dt = 100A/μs) Qrr 110 nC Note 1: TJ = +25℃ to +175 ℃ Note 2: Repetitive rating; pulse width limited by maximum junction temperature. Note 3: ISD = 60A, di/dt <100A/μs, VDD < BVDSS, TJ = +175℃ Note 4: Pulse width < 250μs; duty cycle<2% Note 5: Essentially independent of operating temerpature.

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N-CHANNEL Logic Level Power M OSFET PACKAGE DIMENSION TO-220 e D E A b c φ L F A c D F φ e b Front View Side View E E1L PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE 2006/03/07 Rev 1.1 Champion Microelectronic Corporation Page 6

N-CHANNEL Logic Level Power M OSFET 2006/03/07 Rev 1.1 Champion Microelectronic Corporation Page 7 IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated ci rcuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Us e of CMC products in such applications is understood to be fully at the risk of the cust omer. In order to minimize risks associated with the customer’s applications, th e customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan T E L : +886-3-567 9979 T E L :+886-2-8692 1591 FAX: +88 6-3-567 9909 FAX: +886-2-8692 1596