CMT35N03G CHAMP | Alldatasheet

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25V N-C HANNEL E NHANCEMENT-MODE M OSFET 2007/03/15 Rev1.0 Champion Microelectronic Corporation Page 1 APPLICATION

FEATURES

‹ Vds=25V ‹ R DS(ON)=8.5 mΩ (Max.) , VGS @10V, Ids@30A ‹ R DS(ON)=13 mΩ (Max.), VGS @4.5V, Ids@30A ‹ Advanced trench process technology ‹ High Density Cell Design For Ultra Low On-Resistance ‹ Fully Characterized Avalanche Voltage and Current PIN CONFIGURATION SYMBOL TO-252 Front View 1 23 GATE DRAIN SOURCE D S G N-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA=25℃ unless otherwise notes) Rating Symbol Value Unit Drain - Source Voltage VDS 25 V Gate -Source Voltage VGS ±20 V Continuous Drain Current ID 30 A Pulsed Drain Current1) IDM 260 A Maximum Power Dissipation TA=25℃ PD 60 W TA=75℃ PD 23 W Operating Junction and Storage Temperature Range TJ / TSTG -55 to150 ℃ Junction – to –Case Thermal Resistance RθJC 1.8 ℃/W Junction – to Ambient Thermal Resistance (PCB mount)2) RθJA 50 ℃/W Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation 2 . 1 - i n2 2oz Cu PCB board 3. Guaranteed by design ; not subject to production testing

25V N-C HANNEL E NHANCEMENT-MODE M OSFET 2007/03/15 Rev1.0 Champion Microelectronic Corporation Page 2

ORDERING INFORMATION

ELECTRICAL CHARACTERISTICS

(TA=25℃ unless otherwise notes) Symbol Parameter Test Conditions Min. Typ. Max. Units Static BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA 25 - - V VGS=4.5V, ID=30A - 9.5 13.0 mΩ RDS(ON) Drain-Source On-State Resistancem VGS=10V, ID=30A - 6.5 9.0 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA 1 1.8 3 V gfs Forward Transconductance VDS=15V, ID=15A - 12 - S IDSS Zero Gate Voltage Drain Current VDS=25V, VGS=0V - - 1 uA IGSS Gate-Source Forward Leakage VGS=±20V , VDS=0V - - ±100 nA Dynamic3) Qg Total Gate Charge - 10 25 nC Qgs Gate-Source Charge - 3.5 10 nC Qgd Gate-Drain ("Miller") Charge ID=35A VDS=15V VGS=10V - 3 65 nC td(on) Turn-on Delay Time - 12 - ns tr Rise Time - 4 - ns td(off) Turn-off Delay Time - 32 - ns tf Fall Time VDD=15V ID=1A RG=6Ω RL=15Ω VGEN=10V - 6 - ns Ciss Input Capacitance - 1180 - pF Coss Output Capacitance - 270 - pF Crss Reverse Transfer Capacitance VGS=0V VDS=15V f=1.0MHz - 145 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Diode Forward Voltage IS=20A, VGS=0V - 0.87 1.5 V Is Max. Diode Forward Current - - 20 A Notes: Pulse test : Pulse width <300us , duty cycle <2%.

25V N-C HANNEL E NHANCEMENT-MODE M OSFET 2007/03/15 Rev1.0 Champion Microelectronic Corporation Page 3 TYPICAL CHARACTERISTICS

25V N-C HANNEL E NHANCEMENT-MODE M OSFET 2007/03/15 Rev1.0 Champion Microelectronic Corporation Page 4

25V N-C HANNEL E NHANCEMENT-MODE M OSFET 2007/03/15 Rev1.0 Champion Microelectronic Corporation Page 5 PACKAGE DIMENSION TO-252 12 3 L E C A V J U H D R B SK G PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE

25V N-C HANNEL E NHANCEMENT-MODE M OSFET 2007/03/15 Rev1.0 Champion Microelectronic Corporation Page 6 IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other crit ical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks a ssociated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan T E L : +886-3-567 9979 T E L :+886-2-2788 0558 FAX: +88 6-3-567 9909 FAX: +886-2-2788 2985