CMT2301 CHAMP | Alldatasheet

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P-CHANNEL E NHANCEMENT M ODE M OSFET 2006/10/11 Rev1.2 Champion Microelectronic Corporation Page 1 GENERAL DESCRIPTION

FEATURES

The CMT2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

APPLICATIONS

‹ Power Management in Notebook ‹ Portable Equipment ‹ Battery Powered System ‹ DC/DC Converter ‹ Load Switch ‹ DSC ‹ LCD Display inverter ‹ -20V/-2.3A ,R DS(ON)=130 mΩ@VGS=-4.5V ‹ -20V/-1.9A ,R DS(ON)=190 mΩ@VGS=-2.5V ‹ Super high density cell design for extremely low R DS(ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOT-23-3 package design PIN CONFIGURATION SYMBOL SOT-23-3 Top View GATE DRAIN SOURCE D S G P - C h a n n e l M O S F E T

ORDERING INFORMATION

CMT2301GM233* SOT-23-3 *Note: G : Suffix for Pb Free Product

P-CHANNEL E NHANCEMENT M ODE M OSFET 2006/10/11 Rev1.2 Champion Microelectronic Corporation Page 2 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain- to- Source Voltage VDSS -20 V Gate-to-Source Voltage VGSS ±8 V TA=25℃ -2.5 Continuous Drain Current(TJ=150℃) TA=70℃ ID -1.5 A Pulsed Drain Current IDM -10 A Continuous Source Current(Diode Conduction) IS -1.6 A TA=25℃ 1.25 Power Dissipation TA=70℃ PD 0.8 W Operating Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 120 ℃/W

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25℃. CMT2301 Characteristic Symbol Min Typ Max Units Static Drain-Source Breakdown Voltage ( V GS = 0 V, ID = -250μA) V(BR)DSS -20 V Gate Threshold Voltage ( V DS = VGS, ID = -250μA) VGS(th) -0.45 -1.5 V Gate Leakage Current ( V DS =0 V, VGS = ±8 V) IGSS ±100 nA Zero Gate Voltage Drain Current (VDS = -20 V, VGS = 0 V) (VDS = -20 V, VGS = 0 V, TJ = 55℃) IDSS -10 μA On-State Drain Current ( V DS ≤-5 V, VGS = -4.5V) ( V DS ≤-5 V, VGS = -2.5V) ID(on) A Drain-Source On-Resistance ( V GS = -4.5 V, ID = -2.8A) ( V GS = -2.5 V, ID = -2.0A) RDS(on) 0.105 0.145 0.13 0.19 Ω Forward Transconductance (VDS = -5 V, ID = -2.8V) gFS 6.5 S Diode Forward Voltage (IS=-1.6A,VGS=0V) VSD -0.8 -1.2 V Dynamic Input Capacitance Ciss 415 Output Capacitance Coss 223 Reverse Transfer Capacitance (VDS = -6 V, VGS =-0V, f = 1.0 MHz) Crss 87 pF td(on) 13 25 Turn-On Time tr 36 60 td(off) 42 70 Turn-Off Time (VDD = -6 V,RL=6Ω ID = -1.0 A,VGEN = -4.5 V, RG = 6Ω) tf 34 60 ns Total Gate Charge Qg 5.8 10 Gate-Source Charge Qgs 0.85 Gate-Drain Charge (VDS = -6 V, ID = -2.8 A, VGS =-4.5V) Qgd 1.7 nC

P-CHANNEL E NHANCEMENT M ODE M OSFET 2006/10/11 Rev1.2 Champion Microelectronic Corporation Page 3 TYPICAL CHARACTERISTICS

P-CHANNEL E NHANCEMENT M ODE M OSFET 2006/10/11 Rev1.2 Champion Microelectronic Corporation Page 4 TYPICAL CHARACTERISTICS

P-CHANNEL E NHANCEMENT M ODE M OSFET 2006/10/11 Rev1.2 Champion Microelectronic Corporation Page 5 TYPICAL CHARACTERISTICS

P-CHANNEL E NHANCEMENT M ODE M OSFET 2006/10/11 Rev1.2 Champion Microelectronic Corporation Page 6 PACKAGE DIMENSION SOT-23-3 L D E A b c θ e D E e b A b c Base Metal With Plating Section B-B See Section B-B L1 L θ

P-CHANNEL E NHANCEMENT M ODE M OSFET 2006/10/11 Rev1.2 Champion Microelectronic Corporation Page 7 IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated ci rcuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Us e of CMC products in such applications is understood to be fully at the risk of the cust omer. In order to minimize risks associated with the customer’s applications, th e customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan T E L : +886-3-567 9979 T E L :+886-2-2788 0558 FAX: +88 6-3-567 9909 FAX: +886-2-2788 2985