CMT08N50_09 CHAMP | Alldatasheet

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POWER F IELD E FFECT T RANSISTOR 2009/07/28 Rev. 1.2 Champion Microelectronic Corporation Page 1 GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. ‹ Robust High Voltage Termination ‹ Avalanche Energy Specified ‹ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ‹ Diode is Characterized for Use in Bridge Circuits ‹ I DSS and VDS(on) Specified at Elevated Temperature PIN CONFIGURATION SYMBOL TO-220/TO-220FP Top View 1 23 GATE DRAIN SOURCE D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain to Current － Continuous － Pulsed ID IDM 8.0 A Gate-to-Source Voltage － Continue － Non-repetitive VGS VGSM ±30 ±40 V V Total Power Dissipation TO-220 TO-220FP PD(Max) W Operating and Storage Temperature Range T J, TSTG -55 to 150 ℃ Single Pulse Drain-to-Source Avalanche Energy － T J = 25℃ (VDD = 100V, VGS = 10V, IL = 8A, L = 10mH, RG = 25Ω) EAS 320 mJ Thermal Resistance － Junction to Case － Junction to Ambient θJC θJA 1.0 62.5 ℃/W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds T L 260 ℃

POWER F IELD E FFECT T RANSISTOR 2009/07/28 Rev. 1.2 Champion Microelectronic Corporation Page 2

ORDERING INFORMATION

CMT08N50GN220* TO-220 CMT08N50GN220FP* TO-220 Full Package CMT08N50XN220* TO-220 CMT08N50XN220FP* TO-220 Full Package *Note : G : Suffix for PB Free Product X : Suffix for Halogen Free and PB Free Product

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25℃. CMT08N50 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage ( V GS = 0 V, ID = 250 μA) V(BR)DSS 500 V Drain-Source Leakage Current (VDS = 500 V, VGS = 0 V) (VDS = 400 V, VGS = 0 V, TJ = 125℃) IDSS μA Gate-Source Leakage Current-Forward ( V gsf = 30 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse ( V gsr = -30 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage ( V DS = VGS, ID = 250 μA) VGS(th) 2.0 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 4.0A) * R DS(on) 0.7 Ω Drain-Source On-Voltage (VGS = 10 V) ( I D = 8.0 A) VDS(on) 5.0 7.2 V Forward Transconductance (VDS = 50 V, ID = 4.0A) * g FS 4.9 mmhos Input Capacitance C iss 1450 pF Output Capacitance C oss 190 pF Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Crss 45.4 pF Turn-On Delay Time t d(on) 15 ns Rise Time t r 33 ns Turn-Off Delay Time t d(off) 40 ns Fall Time (RGo + C17n = 9.1Ω) * tf 32 ns Total Gate Charge Q g 40 nC Gate-Source Charge Q gs 8.0 nC Gate-Drain Charge (VDS = 400 V, ID = 8.0 A, VGS = 10 V)* Qgd 17 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) V SD 1.5 V Forward Turn-On Time t on 35 ns Reverse Recovery Time (IS = 8.0 A, VGS = 0 V, dIS/dt = 100A/μs) trr 75 ns * Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance

POWER F IELD E FFECT T RANSISTOR 2009/07/28 Rev. 1.2 Champion Microelectronic Corporation Page 3 TYPICAL ELECTRICAL CHARACTERISTICS

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POWER F IELD E FFECT T RANSISTOR 2009/07/28 Rev. 1.2 Champion Microelectronic Corporation Page 5

POWER F IELD E FFECT T RANSISTOR 2009/07/28 Rev. 1.2 Champion Microelectronic Corporation Page 6 PACKAGE DIMENSION TO-220 TO-220FP

POWER F IELD E FFECT T RANSISTOR 2009/07/28 Rev. 1.2 Champion Microelectronic Corporation Page 7 IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involv e potential risks of death, personal injury, or severe property or environmental damage. CMC integrated ci rcuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Us e of CMC products in such applications is understood to be fully at the risk of the cust omer. In order to minimize risks associated with the customer’s applications, th e customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan 21F., No. 96, Sec. 1, Sintai 5th Rd., Sijhih City, Taipei County 22102, Taiwan, R.O.C. T E L : +886-3-567 9979 T E L : +886-2-2696 3558 FAX: +886-3-567 9909 FAX: +886-2-2696 3559