CMT06N60 CHAMP | Alldatasheet

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POWER F IELD E FFECT T RANSISTOR 2003/06/19 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 1 GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. ! Robust High Voltage Termination ! Avalanche Energy Specified ! Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ! Diode is Characterized for Use in Bridge Circuits ! I DSS Specified at Elevated Temperature PIN CONFIGURATION SYMBOL TO-220/TO-220FP Front View 1 23 GATE DRAIN SOURCE D S G N-Channel MOSFET

POWER F IELD E FFECT T RANSISTOR 2003/06/19 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 2 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain to Current － Continuous － Pulsed ID IDM 6.0 A Gate-to-Source Voltage － Continue － Non-repetitive VGS VGSM ±20 ±40 V V Total Power Dissipation TO-220 TO-220FP PD 125 W Operating and Storage Temperature Range T J, TSTG -55 to 150 ℃ Single Pulse Drain-to-Source Avalanche Energy － T J = 25℃ (VDD = 100V, VGS = 10V, IL = 6A, L = 10mH, RG = 25Ω) EAS 180 mJ Thermal Resistance － Junction to Case － Junction to Ambient θJC θJA 1.0 62.5 ℃/W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds T L 260 ℃ (1) VDD = 50V, ID = 6A (2) Pulse Width and frequency is limited by T J(max) and thermal response

ORDERING INFORMATION

Test Circuit – Avalanche Capability

POWER F IELD E FFECT T RANSISTOR 2003/06/19 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 3

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25℃. CMT06N60 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage ( V GS = 0 V, ID = 250 μA) V(BR)DSS 600 V Drain-Source Leakage Current (VDS = 600 V, VGS = 0 V) (VDS = 480 V, VGS = 0 V, TJ = 125℃) IDSS 100 μA Gate-Source Leakage Current-Forward ( V gsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse ( V gsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage ( V DS = VGS, ID = 250 μA) VGS(th) 2.0 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 3.5A) * R DS(on) 1.2 Ω Forward Transconductance (VDS = 15 V, ID = 3.0A) * g FS 3.4 mhos Input Capacitance C iss 1498 2100 pF Output Capacitance C oss 158 220 pF Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Crss 29 60 pF Turn-On Delay Time t d(on) 14 30 ns Rise Time tr 19 40 ns Turn-Off Delay Time t d(off) 40 80 ns Fall Time (VDD = 300 V, ID = 6.0 A, VGS = 10 V, RG = 9.1Ω) * tf 26 55 ns Total Gate Charge Q g 35.5 50 nC Gate-Source Charge Q gs 8.1 nC Gate-Drain Charge (VDS = 300 V, ID = 6.0 A, VGS = 10 V)* Qgd 14.1 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) V SD 0.83 1.2 V Forward Turn-On Time t on ** ns Reverse Recovery Time (IS = 6.0 A, dIS/dt = 100A/µs) trr 266 ns * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance

POWER F IELD E FFECT T RANSISTOR 2003/06/19 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 4 TYPICAL ELECTRICAL CHARACTERISTICS

POWER F IELD E FFECT T RANSISTOR 2003/06/19 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 5 PACKAGE DIMENSION TO-220 e D E A b c φ L F A c D F φ e b Front View Side View E E1L PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE TO-220FP K M H I J A C B D E G Q b R P O N M N Front View Side View Back View I J H K C B Q DE P G b1 b2 e A b O R e R1.60 R1.50 R1.50 R3.18 ± 0.10

POWER F IELD E FFECT T RANSISTOR 2003/06/19 Preliminary Rev. 1.1 Champion Microelectronic Corporation Page 6 IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, th e customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan T E L : +886-3-567 9979 T E L : +886-2-8692 1591 FAX: +886-3-567 9909 FAX: +886-2-8692 1596