CMH192 TRIQUINT | Alldatasheet

Document overview

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Technical content

  • High-Linear ity, PCS LN A/Mixer IC for use i n US and K orean band C DMA Mobi le Phones
  • Integrated by pass swi tch f or LN A
  • GaAs PH EMT Pr ocess
  • Leadl ess 3. 5 x 3. 5 m m. SMT pack age
  • LO Input power rang e: -7.0 to 0 dB m
  • Oper ating voltag e r ang e: 2. 7 t o 4 V
  • Total cur rent consum ption: 22 m A
  • Adjustabl e M ixer G ain and I P3 E SD: Electrostatic dischar ge sensi tive dev ice O bser ve handl ing Precaut ions! IF Out LNA LO Type Marking Ordering code (tape and reel) Package CMH192 H192 Q62705-K608 VQFN-20 Maximum Ratings Symbol Value Unit min max Supply Voltage VDD 0 6 V DC-Voltage at RF Ports VRF - 0.3 0.3 V DC-Voltage at GND Ports VGND - 0.3 0.3 V DC-Voltage at CNTL Ports VCNTL 0 0.3 + VDD V Power into LO Input Pin,LO 10 dBm Power into RF-IF Ports Pin, RF 10 dBm Operating Temperature Ta - 40 85 °C Channel Temperature TCh 150 °C Storage Temperature Tstg - 55 150 °C Thermal Resistance Channel to Soldering Point (GND) RthChS 102 °C /W CMH192 – Datasheet (October 1st, 2002) pg. 1/11

CMH192 – Datasheet (October 1st, 2002) pg. 2/11

Electrical Characteristics

RF – Frequency / US 1930 - 1990 MHz LO – Frequency / US (1) 1780 - MHz RF – Frequency / Korean 1840 - 1870 MHz LO – Frequency / Korean (1) 1590 - 1820 MHz IF Frequency range 50 - 250 MHz LO Power Input -7.0 - 0.0 dBm Supply Voltage (Vdd) 2.7 - 4.0 V High Logic Level (H) VDD – 0.2 - VDD V Low Logic Level (L) 0.0 - 0.2 V 1) High-side LO is also supported LNA – Performance of LNA Test conditions: Ta = 25°C, VDD= 2.7 V, PRF= -22 dBm, fRF = 1960 MHz, LOW=GND, HIGH=Vdd Mode – High Gain, High Linearity min typ max Unit Operating Current 7 mA Noise Figure 1.1 dB Gain Input / Output return loss 10 dB 3rd Order Input Intercept Point 8.5 dBm Mode – High Gain, Reduced Current min Typ max Unit Operating Current 5 mA Noise Figure 1.2 dB Gain Input / Output return loss 10 dB 3rd Order Input Intercept Point 7.5 dBm Mode – Low Gain, By-Pass Mode min Typ max Unit Operating Current 0 mA Noise Figure 4.5 dB Gain Input / Output return loss 10 dB 3rd Order Input Intercept Point 25 dBm 5 dB 12.3 dB 12.5 dB 1940 GaAs MMIC CMH192 max Unit

Test conditions: Ta = 25°C; VDD= 2.7V, PLO = -7 dBm,PRF=-22 dBm, fRF = 1960 MHz, fLO = fRF - f IF, fIF = 210MHz, LOW=GND, HIGH=Vdd Mode – High Linearity min typ max Unit Operating Current 15 mA Conversion Gain 15.0 dB Noise Figure 3.5 dB 3rd Order Input Intercept Point 5.5 dBm RF Input return loss 10 dB LO Input return loss 10 dB IF Output Impedance (1) 350 - j*515 Ω Mode – Reduced Current min typ max Unit Operating Current 12 mA Conversion Gain 14.5 dB Noise Figure 3.8 dB 3rd Order Input Intercept Point 4 dBm RF Input return loss 10 dB LO Input return loss 10 dB IF Output Impedance (1) 350 - j*515 Ω 1) IF Output externally tuned to desired impedance FULL CHAIN – LNA/Downconverter Characteristics Test conditions: Ta = 25°C; VDD= 2.7V, PLO = -7 dBm, PRF=-22 dBm, fRF = 1960 MHz, fLO = fRF - f IF, fIF = 210MHz, LOW=GND, HIGH=Vdd Mode – High Gain, High Linearity min typ max Unit Total operating Current 22.0 mA Conversion Gain (1) 24.5 Noise Figure 1.7 dB Input IP3 -4.5 dBm LNA Input IP3 10.0 dBm 1) Assumes 3 dB loss for image filter, value is calculated based on gain measurement of LNA and downconverter dB CMH192 – Datasheet (October 1st, 2002) pg. 3/11

CMH192 – Datasheet (October 1st, 2002) pg. 4/11 GaAs MMIC CMH192 FULL CHAIN – LNA/Downconverter Characteristics (continued) Test conditions: Ta = 25°C; VDD= 2.7V, PLO = -7 dBm, PRF=-22 dBm, fRF = 1960 MHz, fLO = fRF - f IF, fIF = 210MHz, LOS=GND, HIGH=Vdd Mode – High Gain, Reduced Current min ty p max Unit Total operating Current 17 mA Conversion Gain (1) 23.5 Noise Figure 1.8 dB Input IP3 -5.5 dBm LNA Input IP3 7.5 dBm Mode – Low Gain (LNA bypass) min Typ max Unit Total operating Current 12 mA Conversion Gain (1) 7.2 Noise Figure 11.5 dB Input IP3 11.5 dBm 1) Assumes 3.0 dB loss for image filter, value is calculated based on gain measurement of LNA and downconverter Truth Table Cont rol Voltage Operating Mode Gain Ctl Rcv Only High Gain & Linearity H H High Gain, Low Current H L Low Gain L L dB dB

PIN Assignments & Functional Block Diagram MIXE RF IF LN LO Pin Assignments: Truth Table: 5 I PIN Symbol Description

1 LO in LO Input

2 GND Ground

3 LOA Vdd Supply voltage for LO Buffer Amp

4 Mix Out Mixer IF Output

F Mtch IF input match connection

6 IF In IF amplifier input

7 GND Ground

8 IFA src IF Amplifier FET source ground

9 IFA out IF Amplifier output

10 GND Ground

11 RFA Vdd Supply voltage for RFA

12 RFA in Mixer input from image filter

13 Rcv Current mode control

14 Vdd Supply voltage

15 LNA out RF output of LNA

16 LNA Vdd Supply voltage for LNA

17 GND Ground

18 LNA in RF Input to LNA

19 GND Ground

20 Gctl Gain mode control for LNA

CMH192 – Datasheet (October 1st, 2002) pg. 5/11

Applications Circuit: Component Description Package Type Component Description Package Type C1 CAP, 1 pF 0402 C12 CAP, 100 pF 0402 C2 CAP, 22 pF 0402 L1 IND, 5.6 nH 0402 C3 CAP, 10K pF 0402 L2 IND, 120 nH 0603 C4 CAP, 100 pF 0402 L3 IND, 100 nH 0603 C5 CAP, 22 pF 0402 L4 IND, 82 nH 0603 C6 CAP, 1000 pF 0402 L5 IND, 2.7 nH 0402 C7 CAP, 10K pF 0402 L6 IND, 5.6 nH 0402 C8 CAP, 3.3 pF 0402 L7 IND, 5.6 nH 0402 C9 CAP, 100 pF 0402 L8 IND, 12 nH 0402 C10 CAP, 2 pF 0402 R1 RES, 100 KOHM 0402 C11 CAP, 4 pF 0402 R2 RES,100 KOHM 0402 CMH192 – Datasheet (October 1st, 2002) pg. 6/11

Package Outline – VQFN 20 Recommended PCB Layout: 100pF 0402 SMT capacitor, 3 places (Murata GRP1555C7H100JZ01 or equivalent ) CMH192 – Datasheet (October 1st, 2002) pg. 7/11

CMH192 – Datasheet (October 1st, 2002) pg. 8/11 GaAs MMIC CMH192 Evaluation Board:

CMH192 – Application Information DC Biasing: Supply Voltage One regulated voltage source is needed for CMH192. On the evaluation board it is labeled VDD. Minimum LO Power for Proper Biasing For proper biasing of the CMH192, a minimum LO input power is required. If the part is turned ON without any LO drive applied all currents will be extremely high. The minimum LO required is approximately –9 dBm. Operation with LO input powers below the minimum value causes the current to increase in all amplifier stages. For higher LO input power levels the current stays relatively constant over a wide range of LO powers. Proper matching of the LO amplifier is also important to achieve the lowest current consumption and to minimize the required LO input power. Adjustable Current Level The CMH192 can operate in two different current/linearity modes: High Linearity (with higher current) and Reduced Current (lower linearity). To operate with reduced current the voltage on pin 13 (RCV) should be set LOW. Some additional current reduction can be achieved by reducing the voltage at pin 14 by placing a resistor between VDD and pin 14. The current pulled by pin 14 is approximately 1 mA. Higher currents can be realized by using a higher VDD voltage. Tuning LO and IF Amplifiers: The CMH192 can be tuned to utilize either high or low side LO frequencies and allows a wide range of IF frequencies. Depending on the chosen frequency plan the off chip components for the LO and IF amplifiers will need to be optimized. An application circuit with all component values is provided for low side LO injection with IF frequency of 210 MHz (RF freq 1930 – 1960 MHz) Two external components (L6 and L7) are required for tuning the LO. L6 is critical for setting the minimum current and to achieve the constant DC current over the operating band. L7 sets the LO input match. Components L4, C9 and C11 form the input match for the IF amplifiers and will vary depending on the chosen IF frequency. The inductor on pin 8 allows adjustment to the gain of the IF amplifier. Output matching components shown in the application circuit provide a transformation for a 50 Ohm load impedance. The output impedance for the IFA (looking into pin 9) at 210 MHz is approximately (350 - j*515) Ohms. CMH192 – Datasheet (October 1st, 2002) pg. 9/11

Downconverter Gain Adjustment: The Downconverter gain can be adjusted by changing the source feedback inductor L3 for the IFA. Higher inductance will give lower downconverter gain and typically improve the IIP3. Gain/Current Control Pins: LOW = 0 to 0.2 V HIGH = Vdd to (Vdd – 0.2) V VGAIN – select between high and low gain states in the LNA. VGAIN = HIGH: LNA ON (~12 dB Gain, ~ 6.5 mA current) VGAIN = LOW: LNA bypassed (~ 4 dB Loss, no current) VRCV - selects Current/Linearity mode (changes current in LNA/RFA/IFA) VRCV = LOW selects Reduced Current Mode VRCV = HIGH selects High Linearity Mode. Other Notes: Inductor L1 is critical for setting the Noise Figure of the LNA. A high Q wire wound inductor (e.g. Coilcraft) is recommended to achieve minimum NF. Inductor L5 and Capacitor C10 form a “tank circuit” to terminate the RF in the mixer. These components should be placed in parallel close to pin 4. These elements may require tuning depending on component vendor and board parasitics to achieve flat conversion gain vs. frequency. Inductor L8 is necessary for proper operation of the circuit for ESD protection. Lower RF frequencies (i.e. Korean PCS or GPS) may be accommodated by adding inductance between the LNA and RFA VDD pins and their bypass capacitors. LNA current can be determined by subtracting the current in Low Gain mode from the current in High Gain mode (keeping VRCV and VMODE constant). Control lines (G_CNTL, VRCV and VMODE) have an input impedance of greater than 1 MΩ when Vdd is ON. When VDD is off, they have approximately 20 KΩ input impedance. CMH192 – Datasheet (October 1st, 2002) pg. 10/11

Published by TriQuint Semiconductor GmbH, Marketing, Konrad-Zuse-Platz 1, D-81829 Munich. Copyright TriQuint Semiconductor GmbH 2002. All Rights Reserved. As far as patents or other rights of third parti es are concerned, liability is only assumed for components per se, not for applications, pr ocesses and circuits implemented within components or assemblies. The information describes the type of com ponent and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery, and prices please contact the Offices of TriQuint Semiconductor in Germany or the TriQuint Semiconductor Companies and Representatives worldwide. Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest TriQuint Semiconductors Office. pg. 11/11 GaAs MMIC CMH192