CMBD7000N3 CYSTEKEC | Alldatasheet
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Technical content
CYStech Electronics Corp. Spec. No. : C329N3 Issued Date : 2006.12.05 Revised Date Page No. : 1/5 CMBD7000N3 CYStek Product Specification High –speed double diode CMBD7000N3
Description
The CMBD7000N3 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small SOT-23 plastic SMD package. Equivalent Circuit Outline CMBD7000N3 SOT-23 Absolute Maximum Ratings @TA=25℃ Parameters Symbol Min Max Unit Reverse voltage VR - 100 V Forward current IF - 200 mA Peak forward surge current IFRM 500 mA Power dissipation (Note 1) Derate above 25℃ PD 225 1.8 mW mW/°C Power dissipation (Note 2) Derate above 25℃ PD 300 2.4 mW mW/°C Junction Temperature Tj -55 150 °C Storage Temperature Tstg -55 +150 °C Note 1: Device mounted on an FR-5 PCB with area 1.0×0.75×0.062 in. 2 : Device mounted on an Alumina board with area 0.4×0.3×0.024 in . 3：Cathode/Anode 1：Anode 2：Cathode Cathode/Anode Cathode Anode
CYStech Electronics Corp. Spec. No. : C329N3 Issued Date : 2006.12.05 Revised Date Page No. : 2/5 CMBD7000N3 CYStek Product Specification Electrical Characteristics @ Tj=25℃ unless otherwise specified Parameters Symbol Conditions Min Typ. Max Unit Reverse breakdown voltage V(BR) I(BR)=100μA 100 - - V Forward voltage VF IF=1mA IF=10mA IF=100mA 0.55 0.67 0.75 0.7 0.82 1.1 V V V Reverse current IR VR=50V VR=100V VR=50V , Tj=125℃ - - 1.0 3.0 100 μA μA μA Diode capacitance Cd VR=0V , f=1MHz - - 1.5 pF Reverse recovery time trr when switched from I F=10mA to IR=10mA, RL=100Ω, measured at IR=1mA - - 4 ns Thermal Characteristics Symbol Parameter Conditions Value Unit Rth,j-a thermal resistance from junction to ambient Note 1 556 ℃/W Rth, j-a thermal resistance from junction to ambient Note 2 417 ℃/W Note 1: Device mounted on an FR-5 PCB with area 1.0×0.75×0.062 in . 2 : Device mounted on an Alumina board with area 0.4×0.3×0.024 in .
Ordering Information
Device Package Shipping Marking CMBD7000N3 SOT-23 (Pb-free) 3000 pcs / Tape & Reel M5C
CYStech Electronics Corp. Spec. No. : C329N3 Issued Date : 2006.12.05 Revised Date Page No. : 3/5 CMBD7000N3 CYStek Product Specification Characteristic Curves(applicable to each diode) Forward Current vs Forward Voltage 100 125 150 175 200 225 250 275 Forward Voltage---VF(V) Forward Current---IF(mA) Diode Capacitance vs Reverse Voltage 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 2 4 6 8 10 12 14 16 Reverse Voltage---VR(V) Diode Capacitance---CD(pF)
CYStech Electronics Corp. Spec. No. : C329N3 Issued Date : 2006.12.05 Revised Date Page No. : 4/5 CMBD7000N3 CYStek Product Specification Reel Dimension Carrier Tape Dimension
CYStech Electronics Corp. Spec. No. : C329N3 Issued Date : 2006.12.05 Revised Date Page No. : 5/5 CMBD7000N3 CYStek Product Specification SOT-23 Dimension *: Typical H JKD A L GV C B S Style: Pin 1.Anode 2.Cathode 3.Cathode/Anode Marking: TEM5C 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 H 0.0005 0.0040 0.013 0.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:
- Lead: 42 Alloy ; solder plating
- Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
- All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
- CYStek reserves the right to make changes to its products without notice.
- CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
- CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.